Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy

Yaxu Gu, Wanqi Jie, Caicai Rong, Lingyan Xu, Yadong Xu, Haoyan Lv, Hao Shen, Guanghua Du, Na Guo, Rongrong Guo, Gangqiang Zha, Tao Wang, Shouzhi Xi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3 × 1011 p/cm2 and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50 V to 400 V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50 V and 100 V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2 MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects.

Original languageEnglish
Pages (from-to)54-59
Number of pages6
JournalMicron
Volume88
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Bias dependent
  • CdZnTe
  • Ion beam induced charge microscopy
  • Proton
  • Radiation damage

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