Abstract
The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3 × 1011 p/cm2 and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50 V to 400 V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50 V and 100 V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2 MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects.
Original language | English |
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Pages (from-to) | 54-59 |
Number of pages | 6 |
Journal | Micron |
Volume | 88 |
DOIs | |
State | Published - 1 Sep 2016 |
Keywords
- Bias dependent
- CdZnTe
- Ion beam induced charge microscopy
- Proton
- Radiation damage