TY - JOUR
T1 - Sn4+ precursor enables 12.4% efficient kesterite solar cell from DMSO solution with open circuit voltage deficit below 0.30 V
AU - Gong, Yuancai
AU - Zhang, Yifan
AU - Jedlicka, Erin
AU - Giridharagopal, Rajiv
AU - Clark, James A.
AU - Yan, Weibo
AU - Niu, Chuanyou
AU - Qiu, Ruichan
AU - Jiang, Jingjing
AU - Yu, Shaotang
AU - Wu, Sanping
AU - Hillhouse, Hugh W.
AU - Ginger, David S.
AU - Huang, Wei
AU - Xin, Hao
N1 - Publisher Copyright:
© 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2021/1
Y1 - 2021/1
N2 - The limiting factor preventing further performance improvement of the kesterite (sulfide Cu2ZnSnS4 (CZTS), selenide Cu2ZnSnSe4 (CZTSe), and their alloying Cu2ZnSn(S,Se)4 (CZTSSe)) thin film solar cells is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345 V for the current world record device with an efficiency of 12.6%. In this study, SnCl4 and SnCl2·2H2O were respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea (Tu) and DMSO resulted in different reaction pathways from the solution to the absorber material and thus dramatic differences in photovoltaic performance. The coordination of Sn2+ with Tu led to the formation of SnS, ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film was 8.84% with a Voc,def of 0.391 V. The coordination of Sn4+ with DMSO facilitated direct formation of CZTS phase in the precursor film which directly converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with an active area efficiency of 12.2% and a Voc,def of 0.344 V was achieved from the Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved the performance of the Sn4+ device but had slightly negative effect on the Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active area efficiency of 13.6%) and a low Voc,def of 0.297 V was achieved from the Sn4+ solution. Our results demonstrate the preformed uniform CZTSSe phase enabled by Sn4+ precursor is the key for the highly efficient CZTSSe absorber. The lowest Voc,def and high efficiency achieved here shines new light on the future of CZTSSe solar cell.
AB - The limiting factor preventing further performance improvement of the kesterite (sulfide Cu2ZnSnS4 (CZTS), selenide Cu2ZnSnSe4 (CZTSe), and their alloying Cu2ZnSn(S,Se)4 (CZTSSe)) thin film solar cells is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345 V for the current world record device with an efficiency of 12.6%. In this study, SnCl4 and SnCl2·2H2O were respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea (Tu) and DMSO resulted in different reaction pathways from the solution to the absorber material and thus dramatic differences in photovoltaic performance. The coordination of Sn2+ with Tu led to the formation of SnS, ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film was 8.84% with a Voc,def of 0.391 V. The coordination of Sn4+ with DMSO facilitated direct formation of CZTS phase in the precursor film which directly converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with an active area efficiency of 12.2% and a Voc,def of 0.344 V was achieved from the Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved the performance of the Sn4+ device but had slightly negative effect on the Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active area efficiency of 13.6%) and a low Voc,def of 0.297 V was achieved from the Sn4+ solution. Our results demonstrate the preformed uniform CZTSSe phase enabled by Sn4+ precursor is the key for the highly efficient CZTSSe absorber. The lowest Voc,def and high efficiency achieved here shines new light on the future of CZTSSe solar cell.
KW - SnCl
KW - V deficit
KW - heterojunction heat treatment
KW - kesterite solar cell
KW - reaction pathway
UR - http://www.scopus.com/inward/record.url?scp=85088795468&partnerID=8YFLogxK
U2 - 10.1007/s40843-020-1408-x
DO - 10.1007/s40843-020-1408-x
M3 - 文章
AN - SCOPUS:85088795468
SN - 2095-8226
VL - 64
SP - 52
EP - 60
JO - Science China Materials
JF - Science China Materials
IS - 1
ER -