Abstract
A surface Ni-doped MgO-Au thin film was prepared by reactive magnetron sputtering and showed a superior secondary electron emission (SEE) performance under continuous electron bombardment in comparison with an undoped one. The experimental results show that the surface Ni-doping improves the electrical conductivity of MgO-Au film due to a size reduction of MgO particles and a bandgap narrowing of the surface MgO layer. Additionally, a 3.4 at% Ni-doped MgO-Au film exhibits an average SEE decay rate per hour as low as 2.6% with a reduction of 31.6% under continuous electron bombardment compared with the undoped one, and especially its SEE coefficient turns to be higher after 4-hour electron bombardment. Thus, the surface Ni-doping is an effective strategy to suppress the surface charging effect and subsequent SEE decay of MgO-Au film owing to the improvement of electrical conductivity.
Original language | English |
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Article number | 128452 |
Journal | Materials Letters |
Volume | 278 |
DOIs | |
State | Published - 1 Nov 2020 |
Keywords
- Electron bombardment
- Secondary electron emission
- Sputtering
- Surface Ni-doping
- Thin film