Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse

As one novel electronic strategy, the integration of memristive behaviors with rectification has shown its potential application. Herein, based on the interfacial effects of a LiF buffer layer at the anode of an electron-type CuPc memristor on reconfiguring the device energy levels and redistributing the charge accumulations, a new class of organic memristor with rectifying characteristics is proposed. Memristive behaviors characterized by smooth consecutive changes are obtained, which are illustrated in detail by the adjustable device energy levels and relevant carrier processes. For this device, aside from its appeal in solving the well-known cross-talk problem, based on the consecutive rectification-regulated memristive behaviors, this study paves the way for devising a new type artificial synapse—an electrical rectifying synapse for effective comprehensive bioinspired computations. Thus these results can invite further investigations of the memristor through energy-level reconfiguration and open original perspectives for rectification-regulated memristors in design for novel brain-like information processing.