TY - JOUR
T1 - Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification
AU - Shi, Wei Wei
AU - Li, Wen
AU - Yi, Ming Dong
AU - Xie, Ling Hai
AU - Wei, Wei
AU - Huang, Wei
PY - 2012/11/20
Y1 - 2012/11/20
N2 - The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.
AB - The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.
KW - Field-effect mobility
KW - Insulating layer
KW - Organic field-effect transistors
KW - Surface modification
UR - http://www.scopus.com/inward/record.url?scp=84870747428&partnerID=8YFLogxK
M3 - 文章
AN - SCOPUS:84870747428
SN - 1000-3290
VL - 61
JO - Wuli Xuebao/Acta Physica Sinica
JF - Wuli Xuebao/Acta Physica Sinica
IS - 22
M1 - 228502
ER -