Probing charged impurities in suspended graphene using raman spectroscopy

Zhen Hua Ni; Ting Yu; Zhi Qiang Luo; Ying Ying Wang; Lei Liu; Choun Pei Wong; Jianmin Miao; Wei Huang; Ze Xiang Shen

doi:10.1021/nn900130g

Probing charged impurities in suspended graphene using raman spectroscopy

Zhen Hua Ni, Ting Yu, Zhi Qiang Luo, Ying Ying Wang, Lei Liu, Choun Pei Wong, Jianmin Miao, Wei Huang, Ze Xiang Shen

Research output: Contribution to journal › Article › peer-review

209 Scopus citations

Abstract

Charged impurity (CI) scattering is one of the dominant factors that affects the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I _2D/I _G, of suspended graphene is much stronger compared to that of nonsuspended graphene, due to the extremely low CI concentration in the former. This finding is consistent with the ultrahigh carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I _2D/I _G ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.

Original language	English
Pages (from-to)	569-574
Number of pages	6
Journal	ACS Nano
Volume	3
Issue number	3
DOIs	https://doi.org/10.1021/nn900130g
State	Published - 24 Mar 2009
Externally published	Yes

Keywords

Charged impurities
Mobility
Raman
Scattering rat
Suspended graphene

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10.1021/nn900130g

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title = "Probing charged impurities in suspended graphene using raman spectroscopy",

abstract = "Charged impurity (CI) scattering is one of the dominant factors that affects the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I 2D/I G, of suspended graphene is much stronger compared to that of nonsuspended graphene, due to the extremely low CI concentration in the former. This finding is consistent with the ultrahigh carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I 2D/I G ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.",

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AU - Ni, Zhen Hua

AU - Yu, Ting

AU - Luo, Zhi Qiang

AU - Wang, Ying Ying

AU - Liu, Lei

AU - Wong, Choun Pei

AU - Miao, Jianmin

AU - Huang, Wei

AU - Shen, Ze Xiang

PY - 2009/3/24

Y1 - 2009/3/24

N2 - Charged impurity (CI) scattering is one of the dominant factors that affects the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I 2D/I G, of suspended graphene is much stronger compared to that of nonsuspended graphene, due to the extremely low CI concentration in the former. This finding is consistent with the ultrahigh carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I 2D/I G ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.

AB - Charged impurity (CI) scattering is one of the dominant factors that affects the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I 2D/I G, of suspended graphene is much stronger compared to that of nonsuspended graphene, due to the extremely low CI concentration in the former. This finding is consistent with the ultrahigh carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I 2D/I G ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.

KW - Charged impurities

KW - Mobility

KW - Raman

KW - Scattering rat

KW - Suspended graphene

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Probing charged impurities in suspended graphene using raman spectroscopy

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Keywords

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