Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films

Huiqing Fan, Jin Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The phase structure and the microstructure of pyrochlor-free (1-x)PMN-xPT (x=0.2∼0.4) relaxor ferroelectric thick films prepared by an electrophoretic deposition on Pt substrate were investigate by XRD and SEM. The dielectric permittivity maximum εm (at 1 kHz) were in the range of 18000∼26500. Relaxor-like behavior was clearly demonstrated in PMN-PT thick-films. Deviation from Curie-Weiss behavior and temperature evolution of the local order parameter were found in the films. The degree of relaxation obtained from the modified Curie-Weiss law strongly suggests the relaxor behavior.

Original languageEnglish
Title of host publication2nd International Conference on Smart Materials and Nanotechnology in Engineering
DOIs
StatePublished - 2009
Event2nd International Conference on Smart Materials and Nanotechnology in Engineering - Weihai, China
Duration: 8 Jul 200911 Jul 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7493
ISSN (Print)0277-786X

Conference

Conference2nd International Conference on Smart Materials and Nanotechnology in Engineering
Country/TerritoryChina
CityWeihai
Period8/07/0911/07/09

Keywords

  • Dielectric properties
  • Electrophoretic deposition
  • PMN-PT films
  • Relaxor

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