TY - JOUR
T1 - Preparation, characterization and microwave absorption properties of bamboo-like β-SiC nanowhiskers by molten-salt synthesis
AU - Hu, Wenlong
AU - Wang, Liuding
AU - Wu, Qiaofeng
AU - Wu, Hongjing
N1 - Publisher Copyright:
© 2014, Springer Science+Business Media New York.
PY - 2014/11/6
Y1 - 2014/11/6
N2 - Bamboo-like and cubic single-crystalline silicon carbide nanowhiskers (SiCNWs) were synthesized using multiwalled carbon nanotube via a process of calcination in the molten-salt circumstance. The system was heated to 1,250 °C and maintained for 6 h in argon atmosphere, and obtained the sample. The as-prepared sample was characterized by a series of techniques. Especially, the microwave absorption properties of SiCNWs/paraffin composites (30 wt%) were investigated over 2–14 GHz. The result shows the optimal reflection loss can reach −48.1 dB at 13.52 GHz when the thickness of the match is only 1.9 mm. The excellent microwave absorption properties of the SiCNWs/paraffin composites due to the dielectric loss would make it as a promising candidate for the application of absorbing materials. In addition, a possible growth mechanism of SiCNWs was also discussed.
AB - Bamboo-like and cubic single-crystalline silicon carbide nanowhiskers (SiCNWs) were synthesized using multiwalled carbon nanotube via a process of calcination in the molten-salt circumstance. The system was heated to 1,250 °C and maintained for 6 h in argon atmosphere, and obtained the sample. The as-prepared sample was characterized by a series of techniques. Especially, the microwave absorption properties of SiCNWs/paraffin composites (30 wt%) were investigated over 2–14 GHz. The result shows the optimal reflection loss can reach −48.1 dB at 13.52 GHz when the thickness of the match is only 1.9 mm. The excellent microwave absorption properties of the SiCNWs/paraffin composites due to the dielectric loss would make it as a promising candidate for the application of absorbing materials. In addition, a possible growth mechanism of SiCNWs was also discussed.
UR - http://www.scopus.com/inward/record.url?scp=84911911939&partnerID=8YFLogxK
U2 - 10.1007/s10854-014-2305-4
DO - 10.1007/s10854-014-2305-4
M3 - 文章
AN - SCOPUS:84911911939
SN - 0957-4522
VL - 25
SP - 5302
EP - 5308
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -