TY - JOUR
T1 - Photoluminescence investigation of CdZnTe
T2 - In single crystals annealed in CdZn vapors
AU - Yang, Ge
AU - Jie, Wanqi
AU - Zhang, Qunying
PY - 2006/7
Y1 - 2006/7
N2 - CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.
AB - CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.
UR - http://www.scopus.com/inward/record.url?scp=33747470263&partnerID=8YFLogxK
U2 - 10.1557/jmr.2006.0219
DO - 10.1557/jmr.2006.0219
M3 - 文章
AN - SCOPUS:33747470263
SN - 0884-2914
VL - 21
SP - 1807
EP - 1809
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 7
ER -