Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

Yong Xie; Manfred Madel; Martin Feneberg; Benjamin Neuschl; Wanqi Jie; Yue Hao; Xiaohua Ma; Klaus Thonke

doi:10.1088/2053-1591/3/4/045011

Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

Yong Xie, Manfred Madel, Martin Feneberg, Benjamin Neuschl, Wanqi Jie, Yue Hao, Xiaohua Ma, Klaus Thonke

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Ultraviolet sensors based on homoepitaxially grown ZnO nanorods were fabricated using clean room technology.Westudy the spectral dependence and frequency dependence of the photoresponse of these rods at different temperatures and ambient conditions. Whereas the response for abovebandgap light is fast, we find a slow response to light below band gap and clear signatures of persistent photoconductivity. These findings are explained by switching oxygen vacancies by light from nonconductive to conductive state, whereas the oxygen vacancies undergo a large lattice relaxation. The threshold photon energy for this process is found to be 2.6 eV at room temperature.

Original language	English
Article number	045011
Journal	Materials Research Express
Volume	3
Issue number	4
DOIs	https://doi.org/10.1088/2053-1591/3/4/045011
State	Published - Apr 2016

Keywords

Persistent photoconductivity
Photodetectors
ZnO

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title = "Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods",

abstract = "Ultraviolet sensors based on homoepitaxially grown ZnO nanorods were fabricated using clean room technology.Westudy the spectral dependence and frequency dependence of the photoresponse of these rods at different temperatures and ambient conditions. Whereas the response for abovebandgap light is fast, we find a slow response to light below band gap and clear signatures of persistent photoconductivity. These findings are explained by switching oxygen vacancies by light from nonconductive to conductive state, whereas the oxygen vacancies undergo a large lattice relaxation. The threshold photon energy for this process is found to be 2.6 eV at room temperature.",

keywords = "Persistent photoconductivity, Photodetectors, ZnO",

author = "Yong Xie and Manfred Madel and Martin Feneberg and Benjamin Neuschl and Wanqi Jie and Yue Hao and Xiaohua Ma and Klaus Thonke",

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T1 - Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

AU - Xie, Yong

AU - Madel, Manfred

AU - Feneberg, Martin

AU - Neuschl, Benjamin

AU - Jie, Wanqi

AU - Hao, Yue

AU - Ma, Xiaohua

AU - Thonke, Klaus

PY - 2016/4

Y1 - 2016/4

N2 - Ultraviolet sensors based on homoepitaxially grown ZnO nanorods were fabricated using clean room technology.Westudy the spectral dependence and frequency dependence of the photoresponse of these rods at different temperatures and ambient conditions. Whereas the response for abovebandgap light is fast, we find a slow response to light below band gap and clear signatures of persistent photoconductivity. These findings are explained by switching oxygen vacancies by light from nonconductive to conductive state, whereas the oxygen vacancies undergo a large lattice relaxation. The threshold photon energy for this process is found to be 2.6 eV at room temperature.

AB - Ultraviolet sensors based on homoepitaxially grown ZnO nanorods were fabricated using clean room technology.Westudy the spectral dependence and frequency dependence of the photoresponse of these rods at different temperatures and ambient conditions. Whereas the response for abovebandgap light is fast, we find a slow response to light below band gap and clear signatures of persistent photoconductivity. These findings are explained by switching oxygen vacancies by light from nonconductive to conductive state, whereas the oxygen vacancies undergo a large lattice relaxation. The threshold photon energy for this process is found to be 2.6 eV at room temperature.

KW - Persistent photoconductivity

KW - Photodetectors

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JO - Materials Research Express

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Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

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