Optical and electrical properties of La2O3 films prepared by ion beam assistant electron beam evaporation

Chen Yang; Huiqing Fan; Shaojun Qiu; Yingxue Xi; Yunfei Fu

doi:10.1142/S0218625X08011354

Optical and electrical properties of La₂O₃ films prepared by ion beam assistant electron beam evaporation

Chen Yang, Huiqing Fan, Shaojun Qiu, Yingxue Xi, Yunfei Fu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

La"2O"3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10^-7 to 10^-4 A/cm² with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ∼18.

Original language	English
Pages (from-to)	271-275
Number of pages	5
Journal	Surface Review and Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1142/S0218625X08011354
State	Published - Jun 2008

Keywords

Electron beam evaporation
Film structure
LaO films
Optical and electrical properties

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10.1142/S0218625X08011354

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title = "Optical and electrical properties of La2O3 films prepared by ion beam assistant electron beam evaporation",

abstract = "La{"}2O{"}3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7 to 10-4 A/cm2 with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ∼18.",

keywords = "Electron beam evaporation, Film structure, LaO films, Optical and electrical properties",

author = "Chen Yang and Huiqing Fan and Shaojun Qiu and Yingxue Xi and Yunfei Fu",

year = "2008",

month = jun,

doi = "10.1142/S0218625X08011354",

language = "英语",

volume = "15",

pages = "271--275",

journal = "Surface Review and Letters",

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T1 - Optical and electrical properties of La2O3 films prepared by ion beam assistant electron beam evaporation

AU - Yang, Chen

AU - Fan, Huiqing

AU - Qiu, Shaojun

AU - Xi, Yingxue

AU - Fu, Yunfei

PY - 2008/6

Y1 - 2008/6

N2 - La"2O"3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7 to 10-4 A/cm2 with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ∼18.

AB - La"2O"3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7 to 10-4 A/cm2 with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ∼18.

KW - Electron beam evaporation

KW - Film structure

KW - LaO films

KW - Optical and electrical properties

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U2 - 10.1142/S0218625X08011354

DO - 10.1142/S0218625X08011354

M3 - 文章

AN - SCOPUS:43949096568

SN - 0218-625X

VL - 15

SP - 271

EP - 275

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 3

ER -

Optical and electrical properties of La₂O₃ films prepared by ion beam assistant electron beam evaporation

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Keywords

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