Modified photoelectric properties of CH3NH3PbI3 via surface passivation induced by argon ions bombardment

L. Ren; Min Wang; Shuanhu Wang; Hafiz Muhammad Zeeshan; Yang Zhao; Ming Li; Hong Yan; Changle Chen; K. Jin

doi:10.1016/j.tsf.2019.06.043

Modified photoelectric properties of CH₃NH₃PbI₃ via surface passivation induced by argon ions bombardment

L. Ren, Min Wang, Shuanhu Wang, Hafiz Muhammad Zeeshan, Yang Zhao, Ming Li, Hong Yan, Changle Chen, K. Jin

School of Physical Science and Technology

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Many investigations have revealed that PbI₂ plays a passivated role to reduce the charge recombination in the perovskite films. However, due to the random distribution of PbI₂ in perovskite films, the passivation effect is blanketed to some extent. In this work, we use the argon ions bombardment to deliberately induce the PbI₂ layer at the surface of perovskite films and investigate the photoelectric performance of samples. It is found that the PbI₂ layer at the surface can passivate the defects effectively, leading to an improvement of the photoconduction by an order of magnitude as well as the responsivity by >4 times under the irradiation of 405 nm light. The bombardment provides an effective method for perovskite surface passivation and optimizing the performances of perovskite-based photoelectric devices.

Original language	English
Pages (from-to)	360-365
Number of pages	6
Journal	Thin Solid Films
Volume	685
DOIs	https://doi.org/10.1016/j.tsf.2019.06.043
State	Published - 1 Sep 2019

Keywords

Methylammonium lead iodide
Passivation
Photoresponse
Surface composition

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10.1016/j.tsf.2019.06.043

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title = "Modified photoelectric properties of CH3NH3PbI3 via surface passivation induced by argon ions bombardment",

abstract = "Many investigations have revealed that PbI2 plays a passivated role to reduce the charge recombination in the perovskite films. However, due to the random distribution of PbI2 in perovskite films, the passivation effect is blanketed to some extent. In this work, we use the argon ions bombardment to deliberately induce the PbI2 layer at the surface of perovskite films and investigate the photoelectric performance of samples. It is found that the PbI2 layer at the surface can passivate the defects effectively, leading to an improvement of the photoconduction by an order of magnitude as well as the responsivity by >4 times under the irradiation of 405 nm light. The bombardment provides an effective method for perovskite surface passivation and optimizing the performances of perovskite-based photoelectric devices.",

keywords = "Methylammonium lead iodide, Passivation, Photoresponse, Surface composition",

author = "L. Ren and Min Wang and Shuanhu Wang and Zeeshan, {Hafiz Muhammad} and Yang Zhao and Ming Li and Hong Yan and Changle Chen and K. Jin",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

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doi = "10.1016/j.tsf.2019.06.043",

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TY - JOUR

T1 - Modified photoelectric properties of CH3NH3PbI3 via surface passivation induced by argon ions bombardment

AU - Ren, L.

AU - Wang, Min

AU - Wang, Shuanhu

AU - Zeeshan, Hafiz Muhammad

AU - Zhao, Yang

AU - Li, Ming

AU - Yan, Hong

AU - Chen, Changle

AU - Jin, K.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Many investigations have revealed that PbI2 plays a passivated role to reduce the charge recombination in the perovskite films. However, due to the random distribution of PbI2 in perovskite films, the passivation effect is blanketed to some extent. In this work, we use the argon ions bombardment to deliberately induce the PbI2 layer at the surface of perovskite films and investigate the photoelectric performance of samples. It is found that the PbI2 layer at the surface can passivate the defects effectively, leading to an improvement of the photoconduction by an order of magnitude as well as the responsivity by >4 times under the irradiation of 405 nm light. The bombardment provides an effective method for perovskite surface passivation and optimizing the performances of perovskite-based photoelectric devices.

AB - Many investigations have revealed that PbI2 plays a passivated role to reduce the charge recombination in the perovskite films. However, due to the random distribution of PbI2 in perovskite films, the passivation effect is blanketed to some extent. In this work, we use the argon ions bombardment to deliberately induce the PbI2 layer at the surface of perovskite films and investigate the photoelectric performance of samples. It is found that the PbI2 layer at the surface can passivate the defects effectively, leading to an improvement of the photoconduction by an order of magnitude as well as the responsivity by >4 times under the irradiation of 405 nm light. The bombardment provides an effective method for perovskite surface passivation and optimizing the performances of perovskite-based photoelectric devices.

KW - Methylammonium lead iodide

KW - Passivation

KW - Photoresponse

KW - Surface composition

UR - http://www.scopus.com/inward/record.url?scp=85068379370&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.06.043

DO - 10.1016/j.tsf.2019.06.043

M3 - 文章

AN - SCOPUS:85068379370

SN - 0040-6090

VL - 685

SP - 360

EP - 365

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Modified photoelectric properties of CH₃NH₃PbI₃ via surface passivation induced by argon ions bombardment

Abstract

Keywords

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