Modification of diluted magnetic semiconductor Cd0.9Mn0.1Te crystal through annealing

Yun Xiao Hao; Xiao Yan Sun; Ji Jun Zhang; Wan Qi Jie

Modification of diluted magnetic semiconductor Cd_0.9Mn_0.1Te crystal through annealing

Yun Xiao Hao, Xiao Yan Sun, Ji Jun Zhang, Wan Qi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The point defect density of Cd_0.9Mn_0.1Te crystal was calculated approximately by the quasi-chemical theory, and obtained the optimum annealing condition in which the deviation from stoichiometry of the crystal is the least. The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd_0.9Mn_0.9Te were analyzed in detail. The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K, the full-width-at-half-maximum (FWHM) of X-ray rocking curve was reduced from 168.8″ to 108″, the IR transmission was improved from 48% to 64%, which is close to the theoretical value. Meanwhile the resistivity is increased from 2.643×10⁵ Ω·cm to 4.49×10⁶ Ω·cm. The results prove that the annealing treatment of the as-grown Cd_0.9Mn_0.1Te crystal can improve the crystal quality, compensate Cd vacancy, and homogenise the crystal composition close to the theoretical stoichiometry.

Original language	English
Pages (from-to)	570-575
Number of pages	6
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	38
Issue number	3
State	Published - Jun 2009

Keywords

Annealing
CdMnTe crystal
Crystal quality
Point defect
Te precipitate

Cite this

@article{2c63f61191504b7fa3eb0f2a0290e478,

title = "Modification of diluted magnetic semiconductor Cd0.9Mn0.1Te crystal through annealing",

abstract = "The point defect density of Cd0.9Mn0.1Te crystal was calculated approximately by the quasi-chemical theory, and obtained the optimum annealing condition in which the deviation from stoichiometry of the crystal is the least. The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd0.9Mn0.9Te were analyzed in detail. The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K, the full-width-at-half-maximum (FWHM) of X-ray rocking curve was reduced from 168.8″ to 108″, the IR transmission was improved from 48% to 64%, which is close to the theoretical value. Meanwhile the resistivity is increased from 2.643×105 Ω·cm to 4.49×106 Ω·cm. The results prove that the annealing treatment of the as-grown Cd0.9Mn0.1Te crystal can improve the crystal quality, compensate Cd vacancy, and homogenise the crystal composition close to the theoretical stoichiometry.",

keywords = "Annealing, CdMnTe crystal, Crystal quality, Point defect, Te precipitate",

author = "Hao, {Yun Xiao} and Sun, {Xiao Yan} and Zhang, {Ji Jun} and Jie, {Wan Qi}",

year = "2009",

month = jun,

language = "英语",

volume = "38",

pages = "570--575",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "3",

}

TY - JOUR

T1 - Modification of diluted magnetic semiconductor Cd0.9Mn0.1Te crystal through annealing

AU - Hao, Yun Xiao

AU - Sun, Xiao Yan

AU - Zhang, Ji Jun

AU - Jie, Wan Qi

PY - 2009/6

Y1 - 2009/6

N2 - The point defect density of Cd0.9Mn0.1Te crystal was calculated approximately by the quasi-chemical theory, and obtained the optimum annealing condition in which the deviation from stoichiometry of the crystal is the least. The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd0.9Mn0.9Te were analyzed in detail. The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K, the full-width-at-half-maximum (FWHM) of X-ray rocking curve was reduced from 168.8″ to 108″, the IR transmission was improved from 48% to 64%, which is close to the theoretical value. Meanwhile the resistivity is increased from 2.643×105 Ω·cm to 4.49×106 Ω·cm. The results prove that the annealing treatment of the as-grown Cd0.9Mn0.1Te crystal can improve the crystal quality, compensate Cd vacancy, and homogenise the crystal composition close to the theoretical stoichiometry.

AB - The point defect density of Cd0.9Mn0.1Te crystal was calculated approximately by the quasi-chemical theory, and obtained the optimum annealing condition in which the deviation from stoichiometry of the crystal is the least. The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd0.9Mn0.9Te were analyzed in detail. The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K, the full-width-at-half-maximum (FWHM) of X-ray rocking curve was reduced from 168.8″ to 108″, the IR transmission was improved from 48% to 64%, which is close to the theoretical value. Meanwhile the resistivity is increased from 2.643×105 Ω·cm to 4.49×106 Ω·cm. The results prove that the annealing treatment of the as-grown Cd0.9Mn0.1Te crystal can improve the crystal quality, compensate Cd vacancy, and homogenise the crystal composition close to the theoretical stoichiometry.

KW - Annealing

KW - CdMnTe crystal

KW - Crystal quality

KW - Point defect

KW - Te precipitate

UR - http://www.scopus.com/inward/record.url?scp=67650528749&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:67650528749

SN - 1000-985X

VL - 38

SP - 570

EP - 575

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 3

ER -

Modification of diluted magnetic semiconductor Cd_0.9Mn_0.1Te crystal through annealing

Abstract

Keywords

Other files and links

Fingerprint

Cite this