Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

Gang Qiang Zha; Wan Qi Jie; Qiang Li; Yong Qin Liu

Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

Gang Qiang Zha, Wan Qi Jie, Qiang Li, Yong Qin Liu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO₂ and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000^™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

Original language	English
Pages (from-to)	120-122
Number of pages	3
Journal	Gongneng Cailiao/Journal of Functional Materials
Volume	37
Issue number	1
State	Published - Jan 2006

Keywords

CdZnTe
Mechanical polishing
Surface damage layer
X-ray rocking curve

Cite this

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title = "Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer",

abstract = "Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000{\texttrademark} to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.",

keywords = "CdZnTe, Mechanical polishing, Surface damage layer, X-ray rocking curve",

author = "Zha, {Gang Qiang} and Jie, {Wan Qi} and Qiang Li and Liu, {Yong Qin}",

year = "2006",

month = jan,

language = "英语",

volume = "37",

pages = "120--122",

journal = "Gongneng Cailiao/Journal of Functional Materials",

issn = "1001-9731",

publisher = "Journal of Functional Materials",

number = "1",

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T1 - Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

AU - Zha, Gang Qiang

AU - Jie, Wan Qi

AU - Li, Qiang

AU - Liu, Yong Qin

PY - 2006/1

Y1 - 2006/1

N2 - Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

AB - Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

KW - CdZnTe

KW - Mechanical polishing

KW - Surface damage layer

KW - X-ray rocking curve

UR - http://www.scopus.com/inward/record.url?scp=33645633373&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:33645633373

SN - 1001-9731

VL - 37

SP - 120

EP - 122

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 1

ER -

Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

Abstract

Keywords

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