Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method

Gun Tae Park; Jong Jin Choi; Jungho Ryu; Huiqing Fan; Hyoun Ee Kim

doi:10.1063/1.1487901

Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method

Gun Tae Park, Jong Jin Choi, Jungho Ryu, Huiqing Fan, Hyoun Ee Kim

Seoul National University

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A method to simultaneously measure the longitudinal (d₃₃) and transverse (d₃₁) piezoelectric coefficients of a lead zirconate titanate (PZT) thin film was developed. This system was based on the pneumatic loading method but was modified to monitor the radial strain when a pressurized gas was introduced into the chamber. The results of the bulk piezoelectric material measured by this system coincided with that measured by both the Berlincourt method and the resonance method. The effective d₃₃ and the real d₃₁ of the PZT thin film fabricated by the sol-gel multiple coating method, and poled at 300kV/cm were 125 and -60pC/N, respectively. The real d₃₃ estimated upon considering the constraints by the silicon substrate was 180pC/N.

Original language	English
Pages (from-to)	4606-4608
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	24
DOIs	https://doi.org/10.1063/1.1487901
State	Published - 17 Jun 2002
Externally published	Yes

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title = "Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method",

abstract = "A method to simultaneously measure the longitudinal (d33) and transverse (d31) piezoelectric coefficients of a lead zirconate titanate (PZT) thin film was developed. This system was based on the pneumatic loading method but was modified to monitor the radial strain when a pressurized gas was introduced into the chamber. The results of the bulk piezoelectric material measured by this system coincided with that measured by both the Berlincourt method and the resonance method. The effective d33 and the real d31 of the PZT thin film fabricated by the sol-gel multiple coating method, and poled at 300kV/cm were 125 and -60pC/N, respectively. The real d33 estimated upon considering the constraints by the silicon substrate was 180pC/N.",

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T1 - Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method

AU - Park, Gun Tae

AU - Choi, Jong Jin

AU - Ryu, Jungho

AU - Fan, Huiqing

AU - Kim, Hyoun Ee

PY - 2002/6/17

Y1 - 2002/6/17

N2 - A method to simultaneously measure the longitudinal (d33) and transverse (d31) piezoelectric coefficients of a lead zirconate titanate (PZT) thin film was developed. This system was based on the pneumatic loading method but was modified to monitor the radial strain when a pressurized gas was introduced into the chamber. The results of the bulk piezoelectric material measured by this system coincided with that measured by both the Berlincourt method and the resonance method. The effective d33 and the real d31 of the PZT thin film fabricated by the sol-gel multiple coating method, and poled at 300kV/cm were 125 and -60pC/N, respectively. The real d33 estimated upon considering the constraints by the silicon substrate was 180pC/N.

AB - A method to simultaneously measure the longitudinal (d33) and transverse (d31) piezoelectric coefficients of a lead zirconate titanate (PZT) thin film was developed. This system was based on the pneumatic loading method but was modified to monitor the radial strain when a pressurized gas was introduced into the chamber. The results of the bulk piezoelectric material measured by this system coincided with that measured by both the Berlincourt method and the resonance method. The effective d33 and the real d31 of the PZT thin film fabricated by the sol-gel multiple coating method, and poled at 300kV/cm were 125 and -60pC/N, respectively. The real d33 estimated upon considering the constraints by the silicon substrate was 180pC/N.

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Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method

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