Manipulating the intrinsic vacancies for enhanced thermoelectric performance in Eu2ZnSb2 Zintl phase

Chen Chen; Xiaofang Li; Wenhua Xue; Fengxian Bai; Yifang Huang; Honghao Yao; Shan Li; Zongwei Zhang; Xinyu Wang; Jiehe Sui; Xingjun Liu; Feng Cao; Yumei Wang; Qian Zhang

doi:10.1016/j.nanoen.2020.104771

Manipulating the intrinsic vacancies for enhanced thermoelectric performance in Eu₂ZnSb₂ Zintl phase

Chen Chen, Xiaofang Li, Wenhua Xue, Fengxian Bai, Yifang Huang, Honghao Yao, Shan Li, Zongwei Zhang, Xinyu Wang, Jiehe Sui, Xingjun Liu, Feng Cao, Yumei Wang, Qian Zhang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Zintl compounds have caught great attention in thermoelectric applications due to their intrinsic “electron-crystal, phonon-glass” structures. Previous studies suggested that Zintl-phase Eu₂ZnSb₂ was a promising thermoelectric material due to its ultralow thermal conductivity. In this work, we used Ag to regulate the Zn–Sb framework for enhanced electrical properties, and prepared Eu₂Zn_1-0.5xAg_xSb₂ (x = 0.02, 0.06, and 0.1) by ball milling and spark plasma sintering. The additional Ag fills the initial vacancies and causes both increased carrier concentration and mobility. The maximum ZT reaches ~0.92 at 823 K for Eu₂Zn_0.97Ag_0.06Sb₂. By further reducing the Zn content, the carrier concentration increases close to the optimum value, and a peak ZT value of ~1.1 at 823 K was achieved for Eu₂Zn_0.95Ag_0.06Sb₂.

Original language	English
Article number	104771
Journal	Nano Energy
Volume	73
DOIs	https://doi.org/10.1016/j.nanoen.2020.104771
State	Published - Jul 2020
Externally published	Yes

Keywords

Carrier mobility
EuZnSb
Intrinsic vacancies
Thermoelectric
Zintl phase

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.nanoen.2020.104771

Cite this

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title = "Manipulating the intrinsic vacancies for enhanced thermoelectric performance in Eu2ZnSb2 Zintl phase",

abstract = "Zintl compounds have caught great attention in thermoelectric applications due to their intrinsic “electron-crystal, phonon-glass” structures. Previous studies suggested that Zintl-phase Eu2ZnSb2 was a promising thermoelectric material due to its ultralow thermal conductivity. In this work, we used Ag to regulate the Zn–Sb framework for enhanced electrical properties, and prepared Eu2Zn1-0.5xAgxSb2 (x = 0.02, 0.06, and 0.1) by ball milling and spark plasma sintering. The additional Ag fills the initial vacancies and causes both increased carrier concentration and mobility. The maximum ZT reaches ~0.92 at 823 K for Eu2Zn0.97Ag0.06Sb2. By further reducing the Zn content, the carrier concentration increases close to the optimum value, and a peak ZT value of ~1.1 at 823 K was achieved for Eu2Zn0.95Ag0.06Sb2.",

keywords = "Carrier mobility, EuZnSb, Intrinsic vacancies, Thermoelectric, Zintl phase",

author = "Chen Chen and Xiaofang Li and Wenhua Xue and Fengxian Bai and Yifang Huang and Honghao Yao and Shan Li and Zongwei Zhang and Xinyu Wang and Jiehe Sui and Xingjun Liu and Feng Cao and Yumei Wang and Qian Zhang",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = jul,

doi = "10.1016/j.nanoen.2020.104771",

language = "英语",

volume = "73",

journal = "Nano Energy",

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T1 - Manipulating the intrinsic vacancies for enhanced thermoelectric performance in Eu2ZnSb2 Zintl phase

AU - Chen, Chen

AU - Li, Xiaofang

AU - Xue, Wenhua

AU - Bai, Fengxian

AU - Huang, Yifang

AU - Yao, Honghao

AU - Li, Shan

AU - Zhang, Zongwei

AU - Wang, Xinyu

AU - Sui, Jiehe

AU - Liu, Xingjun

AU - Cao, Feng

AU - Wang, Yumei

AU - Zhang, Qian

PY - 2020/7

Y1 - 2020/7

N2 - Zintl compounds have caught great attention in thermoelectric applications due to their intrinsic “electron-crystal, phonon-glass” structures. Previous studies suggested that Zintl-phase Eu2ZnSb2 was a promising thermoelectric material due to its ultralow thermal conductivity. In this work, we used Ag to regulate the Zn–Sb framework for enhanced electrical properties, and prepared Eu2Zn1-0.5xAgxSb2 (x = 0.02, 0.06, and 0.1) by ball milling and spark plasma sintering. The additional Ag fills the initial vacancies and causes both increased carrier concentration and mobility. The maximum ZT reaches ~0.92 at 823 K for Eu2Zn0.97Ag0.06Sb2. By further reducing the Zn content, the carrier concentration increases close to the optimum value, and a peak ZT value of ~1.1 at 823 K was achieved for Eu2Zn0.95Ag0.06Sb2.

AB - Zintl compounds have caught great attention in thermoelectric applications due to their intrinsic “electron-crystal, phonon-glass” structures. Previous studies suggested that Zintl-phase Eu2ZnSb2 was a promising thermoelectric material due to its ultralow thermal conductivity. In this work, we used Ag to regulate the Zn–Sb framework for enhanced electrical properties, and prepared Eu2Zn1-0.5xAgxSb2 (x = 0.02, 0.06, and 0.1) by ball milling and spark plasma sintering. The additional Ag fills the initial vacancies and causes both increased carrier concentration and mobility. The maximum ZT reaches ~0.92 at 823 K for Eu2Zn0.97Ag0.06Sb2. By further reducing the Zn content, the carrier concentration increases close to the optimum value, and a peak ZT value of ~1.1 at 823 K was achieved for Eu2Zn0.95Ag0.06Sb2.

KW - Carrier mobility

KW - EuZnSb

KW - Intrinsic vacancies

KW - Thermoelectric

KW - Zintl phase

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DO - 10.1016/j.nanoen.2020.104771

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