Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

Ningbo Jia; Yadong Xu; Rongrong Guo; Yaxu Gu; Xu Fu; Yuhan Wang; Wanqi Jie

doi:10.1016/j.jcrysgro.2016.08.008

Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

Ningbo Jia, Yadong Xu, Rongrong Guo, Yaxu Gu, Xu Fu, Yuhan Wang, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The migration of dislocations in substrate-grade CdZnTe (CZT) single crystals during temperature gradient annealing under Cd/Zn vapor has been investigated. The etch pit density (EPD) and configuration of dislocations have been evaluated before and after annealing in CZT crystals with and without Cd-rich second phase (Cd-SP) particles, respectively. After Cd/Zn overpressure annealing, dislocation reduction in CZT crystals was observed. However, dislocation walls with 120° intervals along <211> crystalline direction were observed in the both types of CZT crystals. The formation of these dislocation walls can be attributed to the reaction of <110> dislocations. Moreover, it is considered that the release of the restored stress during annealing act as the domain driving force for dislocation migration, by comparing the variation of dislocation configuration in CZT crystals with and without Cd-SP particles.

Original language	English
Pages (from-to)	343-348
Number of pages	6
Journal	Journal of Crystal Growth
Volume	457
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.08.008
State	Published - 1 Jan 2017

Keywords

A1. Line defects
A1. Substrates
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2016.08.008

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title = "Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing",

abstract = "The migration of dislocations in substrate-grade CdZnTe (CZT) single crystals during temperature gradient annealing under Cd/Zn vapor has been investigated. The etch pit density (EPD) and configuration of dislocations have been evaluated before and after annealing in CZT crystals with and without Cd-rich second phase (Cd-SP) particles, respectively. After Cd/Zn overpressure annealing, dislocation reduction in CZT crystals was observed. However, dislocation walls with 120° intervals along <211> crystalline direction were observed in the both types of CZT crystals. The formation of these dislocation walls can be attributed to the reaction of <110> dislocations. Moreover, it is considered that the release of the restored stress during annealing act as the domain driving force for dislocation migration, by comparing the variation of dislocation configuration in CZT crystals with and without Cd-SP particles.",

keywords = "A1. Line defects, A1. Substrates, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting ternary compounds",

author = "Ningbo Jia and Yadong Xu and Rongrong Guo and Yaxu Gu and Xu Fu and Yuhan Wang and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2016.08.008",

language = "英语",

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T1 - Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

AU - Jia, Ningbo

AU - Xu, Yadong

AU - Guo, Rongrong

AU - Gu, Yaxu

AU - Fu, Xu

AU - Wang, Yuhan

AU - Jie, Wanqi

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The migration of dislocations in substrate-grade CdZnTe (CZT) single crystals during temperature gradient annealing under Cd/Zn vapor has been investigated. The etch pit density (EPD) and configuration of dislocations have been evaluated before and after annealing in CZT crystals with and without Cd-rich second phase (Cd-SP) particles, respectively. After Cd/Zn overpressure annealing, dislocation reduction in CZT crystals was observed. However, dislocation walls with 120° intervals along <211> crystalline direction were observed in the both types of CZT crystals. The formation of these dislocation walls can be attributed to the reaction of <110> dislocations. Moreover, it is considered that the release of the restored stress during annealing act as the domain driving force for dislocation migration, by comparing the variation of dislocation configuration in CZT crystals with and without Cd-SP particles.

AB - The migration of dislocations in substrate-grade CdZnTe (CZT) single crystals during temperature gradient annealing under Cd/Zn vapor has been investigated. The etch pit density (EPD) and configuration of dislocations have been evaluated before and after annealing in CZT crystals with and without Cd-rich second phase (Cd-SP) particles, respectively. After Cd/Zn overpressure annealing, dislocation reduction in CZT crystals was observed. However, dislocation walls with 120° intervals along <211> crystalline direction were observed in the both types of CZT crystals. The formation of these dislocation walls can be attributed to the reaction of <110> dislocations. Moreover, it is considered that the release of the restored stress during annealing act as the domain driving force for dislocation migration, by comparing the variation of dislocation configuration in CZT crystals with and without Cd-SP particles.

KW - A1. Line defects

KW - A1. Substrates

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting ternary compounds

UR - http://www.scopus.com/inward/record.url?scp=84981716572&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.08.008

DO - 10.1016/j.jcrysgro.2016.08.008

M3 - 文章

AN - SCOPUS:84981716572

SN - 0022-0248

VL - 457

SP - 343

EP - 348

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

Abstract

Keywords

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