Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3) Single Crystals for High-Mobility Transistor-Based Memory Devices

Jiake Wu; Congcheng Fan; Guobiao Xue; Tao Ye; Shuang Liu; Ruoqian Lin; Hongzheng Chen; Huolin L. Xin; Ren Gen Xiong; Hanying Li

doi:10.1002/adma.201501577

Interfacing Solution-Grown C₆₀ and (3-Pyrrolinium)(CdCl₃) Single Crystals for High-Mobility Transistor-Based Memory Devices

Jiake Wu, Congcheng Fan, Guobiao Xue, Tao Ye, Shuang Liu, Ruoqian Lin, Hongzheng Chen, Huolin L. Xin, Ren Gen Xiong, Hanying Li

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl₃) can be prepared from solution on top of aligned semiconducting C₆₀ single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C₆₀ single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.

Original language	English
Pages (from-to)	4476-4480
Number of pages	5
Journal	Advanced Materials
Volume	27
Issue number	30
DOIs	https://doi.org/10.1002/adma.201501577
State	Published - 1 Aug 2015
Externally published	Yes

Keywords

field-effect transistors
memory
organic electronics
single crystals
solution processing

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10.1002/adma.201501577

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title = "Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3) Single Crystals for High-Mobility Transistor-Based Memory Devices",

abstract = "Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl3) can be prepared from solution on top of aligned semiconducting C60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.",

keywords = "field-effect transistors, memory, organic electronics, single crystals, solution processing",

author = "Jiake Wu and Congcheng Fan and Guobiao Xue and Tao Ye and Shuang Liu and Ruoqian Lin and Hongzheng Chen and Xin, {Huolin L.} and Xiong, {Ren Gen} and Hanying Li",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

month = aug,

day = "1",

doi = "10.1002/adma.201501577",

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journal = "Advanced Materials",

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T1 - Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3) Single Crystals for High-Mobility Transistor-Based Memory Devices

AU - Wu, Jiake

AU - Fan, Congcheng

AU - Xue, Guobiao

AU - Ye, Tao

AU - Liu, Shuang

AU - Lin, Ruoqian

AU - Chen, Hongzheng

AU - Xin, Huolin L.

AU - Xiong, Ren Gen

AU - Li, Hanying

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl3) can be prepared from solution on top of aligned semiconducting C60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.

AB - Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl3) can be prepared from solution on top of aligned semiconducting C60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.

KW - field-effect transistors

KW - memory

KW - organic electronics

KW - single crystals

KW - solution processing

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DO - 10.1002/adma.201501577

M3 - 文章

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SN - 0935-9648

VL - 27

SP - 4476

EP - 4480

JO - Advanced Materials

JF - Advanced Materials

IS - 30

ER -

Interfacing Solution-Grown C₆₀ and (3-Pyrrolinium)(CdCl₃) Single Crystals for High-Mobility Transistor-Based Memory Devices

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Keywords

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