Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic

Dong Hai Ding; Wan Cheng Zhou; Xuan Zhou; Fa Luo; Dong Mei Zhu

doi:10.1016/S1003-6326(11)61524-0

Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic

Dong Hai Ding, Wan Cheng Zhou, Xuan Zhou, Fa Luo, Dong Mei Zhu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200°C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity.

Original language	English
Pages (from-to)	2726-2729
Number of pages	4
Journal	Transactions of Nonferrous Metals Society of China (English Edition)
Volume	22
Issue number	11
DOIs	https://doi.org/10.1016/S1003-6326(11)61524-0
State	Published - Nov 2012

Keywords

complex permittivity
dielectric properties
free carbon
polycarbosilane derived SiC
pyrolysis temperature
silicon carbide ceramic

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10.1016/S1003-6326(11)61524-0

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title = "Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic",

abstract = "β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200°C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity.",

keywords = "complex permittivity, dielectric properties, free carbon, polycarbosilane derived SiC, pyrolysis temperature, silicon carbide ceramic",

author = "Ding, {Dong Hai} and Zhou, {Wan Cheng} and Xuan Zhou and Fa Luo and Zhu, {Dong Mei}",

year = "2012",

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doi = "10.1016/S1003-6326(11)61524-0",

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T1 - Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic

AU - Ding, Dong Hai

AU - Zhou, Wan Cheng

AU - Zhou, Xuan

AU - Luo, Fa

AU - Zhu, Dong Mei

PY - 2012/11

Y1 - 2012/11

N2 - β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200°C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity.

AB - β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200°C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity.

KW - complex permittivity

KW - dielectric properties

KW - free carbon

KW - polycarbosilane derived SiC

KW - pyrolysis temperature

KW - silicon carbide ceramic

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U2 - 10.1016/S1003-6326(11)61524-0

DO - 10.1016/S1003-6326(11)61524-0

M3 - 文章

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SN - 1003-6326

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JO - Transactions of Nonferrous Metals Society of China (English Edition)

JF - Transactions of Nonferrous Metals Society of China (English Edition)

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ER -

Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic

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