Abstract
CVD-SiC coated C/SiC composites were implanted with boron ions by plasma source ion implantation to improve its oxidation resistance. Depth profile of the boron ions in the boron-implanted SiC-C/SiC composites was checked by Auger electronic energy spectrum. Oxidation tests of the SiC-C/SiC composites were performed in flowing dry air at 1300°C. The sample with boron ion implantation exhibits lower mass loss than those without boron ion implantation. The surface morphology of the sample was obtained by scan electronic microscope. Some air bubbles were observed in the coating. Flexural strength tests show that the mechanical property of ion-implanted samples changes little compared with that of the samples without ion implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 60-63 |
| Number of pages | 4 |
| Journal | Fuhe Cailiao Xuebao/Acta Materiae Compositae Sinica |
| Volume | 22 |
| Issue number | 3 |
| State | Published - Jun 2005 |
Keywords
- Composites
- Ion implantation
- Plasma source ion implantation (PSII)
- SiC-C/SiC