In-situ SRPES study on the band alignment of (0001)CdS/CdTe Heterojunction

Jun Ning Gao; Wan Qi Jie; Yan Yan Yuan; Gang Qiang Zha; Ling Yan Xu; Heng Wu; Ya Bin Wang; Hui Yu; Jun Fa Zhu

doi:10.1088/0256-307X/29/5/057301

In-situ SRPES study on the band alignment of (0001)CdS/CdTe Heterojunction

Jun Ning Gao, Wan Qi Jie, Yan Yan Yuan, Gang Qiang Zha, Ling Yan Xu, Heng Wu, Ya Bin Wang, Hui Yu, Jun Fa Zhu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔE_V is calculated to be 0.65 eV and the conduction band offset ΔE_C is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.

Original language	English
Article number	057301
Journal	Chinese Physics Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/29/5/057301
State	Published - May 2012

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title = "In-situ SRPES study on the band alignment of (0001)CdS/CdTe Heterojunction",

abstract = "The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔEV is calculated to be 0.65 eV and the conduction band offset ΔEC is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.",

author = "Gao, {Jun Ning} and Jie, {Wan Qi} and Yuan, {Yan Yan} and Zha, {Gang Qiang} and Xu, {Ling Yan} and Heng Wu and Wang, {Ya Bin} and Hui Yu and Zhu, {Jun Fa}",

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month = may,

doi = "10.1088/0256-307X/29/5/057301",

language = "英语",

volume = "29",

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T1 - In-situ SRPES study on the band alignment of (0001)CdS/CdTe Heterojunction

AU - Gao, Jun Ning

AU - Jie, Wan Qi

AU - Yuan, Yan Yan

AU - Zha, Gang Qiang

AU - Xu, Ling Yan

AU - Wu, Heng

AU - Wang, Ya Bin

AU - Yu, Hui

AU - Zhu, Jun Fa

PY - 2012/5

Y1 - 2012/5

N2 - The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔEV is calculated to be 0.65 eV and the conduction band offset ΔEC is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.

AB - The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔEV is calculated to be 0.65 eV and the conduction band offset ΔEC is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.

UR - http://www.scopus.com/inward/record.url?scp=84861180902&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/29/5/057301

DO - 10.1088/0256-307X/29/5/057301

M3 - 文章

AN - SCOPUS:84861180902

SN - 0256-307X

VL - 29

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 5

M1 - 057301

ER -

In-situ SRPES study on the band alignment of (0001)CdS/CdTe Heterojunction

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