Growthand characterization of thick epitaxial CdZnTe film by close space sublimation

The close space sublimation method was used for the epitaxial growth of thick CdZnTe single crystal films for high-energy radiation detectors. High quality CdZnTe epilayers had been successfully grown on a GaAs(100) substrate by CSS method. Crystalline quality of the upper and lower surfaces of the epilayer was assessed from X-ray rocking curve measurements and photoluminescence(PL) spectra after GaAs(100) substrate had been removed by Chemical etching. The density of defects in the epilayer decreases with increasing the thickness, which suggests that the high-quality epilayer can be obtained by increasing the thickness. No Te inclusions in the CdZnTe films grown on GaAs(100) were observed with IR transmission imaging. The film resistivity was in the order of 10¹⁰ Ω·cm, which shows a good photoelectric property.