Abstract
High-quality HgCdTe crystal (composition=0.20) with a diameter of φ40 mm was grown by composition pressure-modified Bridgman method with the starting charge of 0.06 and the burden technology. Suitable high pressure of N2 outside the synthesis quartz ampoule and growth quartz ampoule can balance the high mercury pressure in the ampoules and avoid the explosion of large-diameter quartz ampoules during the synthesis and growth of HgCdTe. Twice burden technology was proposed to lower the growth temperature and get HgCdTe crystals with perfect structure, uniform composition and good electric properties.
| Original language | English |
|---|---|
| Pages (from-to) | 440-445 |
| Number of pages | 6 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 22 |
| Issue number | 4 |
| State | Published - Apr 2001 |
| Externally published | Yes |
Keywords
- Composition uniformity.
- Crystal structure perfection
- HgCdTe crystal
- Pressure-modified Bridgman method
- Twice burden technology