Growth and properties of Cd0.8Mn0.2Te crystal

Jijun Zhang; Wanqi Jie

Growth and properties of Cd_0.8Mn_0.2Te crystal

Jijun Zhang, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd_0.8Mn_0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.

Original language	English
Pages (from-to)	1026-1029
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	6
State	Published - Jun 2006

Keywords

CdMnTe
Infrared transmittance
Resistivity
Ultraviolet visible-near infrared spectrum
X-ray diffraction

Cite this

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title = "Growth and properties of Cd0.8Mn0.2Te crystal",

abstract = "By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.",

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author = "Jijun Zhang and Wanqi Jie",

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T1 - Growth and properties of Cd0.8Mn0.2Te crystal

AU - Zhang, Jijun

AU - Jie, Wanqi

PY - 2006/6

Y1 - 2006/6

N2 - By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.

AB - By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.

KW - CdMnTe

KW - Infrared transmittance

KW - Resistivity

KW - Ultraviolet visible-near infrared spectrum

KW - X-ray diffraction

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JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 6

ER -

Growth and properties of Cd_0.8Mn_0.2Te crystal

Abstract

Keywords

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