Erratum to: Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method: Deep-level defects in CdZnTe grown by travelling heater method (physica status solidi (a), (2017), 214, 5, (1600748), 10.1002/pssa.201600748)

The resistivity shown in Table was bulk resistivity, taken from Fig. 3 in our paper, instead of the Hall resistivity. To make it clear, we added the bulk resistivity and Hall resistivity in Table (see below). The difference between bulk resistivity and Hall resistivity is discussed. The affected sentences in the Results and discussion are also improved. 2 Hall results and bulk resistivities of CZT samples from different regions of the as-grown ingot (Table presented.) 3 Results and discussion The sentence “The I–V results shown in Fig. 3 indicate that high resistivity of ∼10⁹ Ω cm is obtained.” is replaced with the sentences “The I–V results shown in Fig. 3 indicate that high resistivity of ∼10⁹ Ω cm is obtained, which is different from the Hall resistivity shown in Table. For high resistive CZT, the surface states of samples may influence much in the Hall measurement. Therefore, Hall resistivity and carrier concentration taken from the Hall measurements are only used qualitatively to indicate difference from the tip to tail part of the as-grown ingot. The bulk resistivity used here was by I–V analysis, which we think can reflect more clearly genuine resistivity for high resistive CZT”. The sentences “The mobility for electrons is obtained by the expression for mobility, which is μ=d/trE (cm² V⁻¹ s⁻¹) (where d is the thickness of the detector, t_R is the carrier transit time, and E is the electric field strength).” are added in the front of the sentence “As shown in Fig. 4, the mobility for electrons increases significantly from 634 ± 26 cm²V⁻¹ s⁻¹ in the tip sample to 860 ± 10 cm²V⁻¹ s⁻¹ in the tail sample,”.