Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au

Lian Dong Zhang; Zhong Ming Nie; Li Fu; Gang Qiang Zha; Wan Qi Jie

Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au

Lian Dong Zhang, Zhong Ming Nie, Li Fu, Gang Qiang Zha, Wan Qi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

Au ohmic electrodes were prepared by the reaction of gold chloride solution on p-CdZnTe surface, and the Ring-CTLM (ring circular transmission line model method) graph was gained by photolithography. The ohmic contact resistivities (ρc) of Au/p-CdZnTe contacts after annealing at different temperature were characterized by I-V measurement. ρc of contact after annealing at 200°C was improved to be 0.1524Ω·cm². From XPS analysis, CdTeO₃ interface layer was found. This interface layer could act as the charge carrier recombination center, which can explain the ohmic contact mechanism of Au/p-CdZnTe.

Original language	English
Pages (from-to)	1050-1051+1055
Journal	Gongneng Cailiao/Journal of Functional Materials
Volume	39
Issue number	6
State	Published - Jun 2008

Keywords

CdTeO interface
CdZnTe wafer
Electroless Au contact
Measurement of ohmic contact resistivity

Cite this

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title = "Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au",

abstract = "Au ohmic electrodes were prepared by the reaction of gold chloride solution on p-CdZnTe surface, and the Ring-CTLM (ring circular transmission line model method) graph was gained by photolithography. The ohmic contact resistivities (ρc) of Au/p-CdZnTe contacts after annealing at different temperature were characterized by I-V measurement. ρc of contact after annealing at 200°C was improved to be 0.1524Ω·cm2. From XPS analysis, CdTeO3 interface layer was found. This interface layer could act as the charge carrier recombination center, which can explain the ohmic contact mechanism of Au/p-CdZnTe.",

keywords = "CdTeO interface, CdZnTe wafer, Electroless Au contact, Measurement of ohmic contact resistivity",

author = "Zhang, {Lian Dong} and Nie, {Zhong Ming} and Li Fu and Zha, {Gang Qiang} and Jie, {Wan Qi}",

year = "2008",

month = jun,

language = "英语",

volume = "39",

pages = "1050--1051+1055",

journal = "Gongneng Cailiao/Journal of Functional Materials",

issn = "1001-9731",

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TY - JOUR

T1 - Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au

AU - Zhang, Lian Dong

AU - Nie, Zhong Ming

AU - Fu, Li

AU - Zha, Gang Qiang

AU - Jie, Wan Qi

PY - 2008/6

Y1 - 2008/6

N2 - Au ohmic electrodes were prepared by the reaction of gold chloride solution on p-CdZnTe surface, and the Ring-CTLM (ring circular transmission line model method) graph was gained by photolithography. The ohmic contact resistivities (ρc) of Au/p-CdZnTe contacts after annealing at different temperature were characterized by I-V measurement. ρc of contact after annealing at 200°C was improved to be 0.1524Ω·cm2. From XPS analysis, CdTeO3 interface layer was found. This interface layer could act as the charge carrier recombination center, which can explain the ohmic contact mechanism of Au/p-CdZnTe.

AB - Au ohmic electrodes were prepared by the reaction of gold chloride solution on p-CdZnTe surface, and the Ring-CTLM (ring circular transmission line model method) graph was gained by photolithography. The ohmic contact resistivities (ρc) of Au/p-CdZnTe contacts after annealing at different temperature were characterized by I-V measurement. ρc of contact after annealing at 200°C was improved to be 0.1524Ω·cm2. From XPS analysis, CdTeO3 interface layer was found. This interface layer could act as the charge carrier recombination center, which can explain the ohmic contact mechanism of Au/p-CdZnTe.

KW - CdTeO interface

KW - CdZnTe wafer

KW - Electroless Au contact

KW - Measurement of ohmic contact resistivity

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M3 - 文章

AN - SCOPUS:47549093548

SN - 1001-9731

VL - 39

SP - 1050-1051+1055

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 6

ER -

Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au

Abstract

Keywords

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