Effects of annealing in Te2 atmosphere on photoelectric properties and carrier transport properties of CdZnTe films

Xin Wan; Yang Li; Tingting Tan; Yajie Liu; Heming Wei; Kun Cao; Gangqiang Zha

doi:10.1016/j.mssp.2022.107158

Effects of annealing in Te₂ atmosphere on photoelectric properties and carrier transport properties of CdZnTe films

Xin Wan, Yang Li, Tingting Tan, Yajie Liu, Heming Wei, Kun Cao, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

CdZnTe (CZT) epitaxial films were deposited on GaAs substrates by closed spaced sublimation. In order to reduce the adverse effects of point defects and dislocations in the film on its properties, CZT films were annealed at 400 °C in Te₂ atmosphere at different times. The I–V test and energy spectrum show that the resistivity of CZT films increased from 10⁹ Ω cm to 10¹⁰ Ω cm, and the electron mobility lifetime product (μτ)_e increased from 10⁻⁵ cm² V⁻¹ to 10⁻⁴ cm² V⁻¹. According to the etch pit density and photoluminescence tests, the results show that annealing reduced the dislocation density from 3.28 × 10⁵ cm⁻² to 2.52 × 10⁵ cm⁻² in the CdZnTe films. In this study, the annealing process which can stably improve the properties of CdZnTe films is obtained, that is, annealing at 400 °C in Te₂ atmosphere for 2–4 h.

Original language	English
Article number	107158
Journal	Materials Science in Semiconductor Processing
Volume	153
DOIs	https://doi.org/10.1016/j.mssp.2022.107158
State	Published - Jan 2023

Keywords

Annealing
CdZnTe epitaxial Films
Dislocation
Point defects
Resistivity

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title = "Effects of annealing in Te2 atmosphere on photoelectric properties and carrier transport properties of CdZnTe films",

abstract = "CdZnTe (CZT) epitaxial films were deposited on GaAs substrates by closed spaced sublimation. In order to reduce the adverse effects of point defects and dislocations in the film on its properties, CZT films were annealed at 400 °C in Te2 atmosphere at different times. The I–V test and energy spectrum show that the resistivity of CZT films increased from 109 Ω cm to 1010 Ω cm, and the electron mobility lifetime product (μτ)e increased from 10−5 cm2 V−1 to 10−4 cm2 V−1. According to the etch pit density and photoluminescence tests, the results show that annealing reduced the dislocation density from 3.28 × 105 cm−2 to 2.52 × 105 cm−2 in the CdZnTe films. In this study, the annealing process which can stably improve the properties of CdZnTe films is obtained, that is, annealing at 400 °C in Te2 atmosphere for 2–4 h.",

keywords = "Annealing, CdZnTe epitaxial Films, Dislocation, Point defects, Resistivity",

author = "Xin Wan and Yang Li and Tingting Tan and Yajie Liu and Heming Wei and Kun Cao and Gangqiang Zha",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2023",

month = jan,

doi = "10.1016/j.mssp.2022.107158",

language = "英语",

volume = "153",

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TY - JOUR

T1 - Effects of annealing in Te2 atmosphere on photoelectric properties and carrier transport properties of CdZnTe films

AU - Wan, Xin

AU - Li, Yang

AU - Tan, Tingting

AU - Liu, Yajie

AU - Wei, Heming

AU - Cao, Kun

AU - Zha, Gangqiang

PY - 2023/1

Y1 - 2023/1

N2 - CdZnTe (CZT) epitaxial films were deposited on GaAs substrates by closed spaced sublimation. In order to reduce the adverse effects of point defects and dislocations in the film on its properties, CZT films were annealed at 400 °C in Te2 atmosphere at different times. The I–V test and energy spectrum show that the resistivity of CZT films increased from 109 Ω cm to 1010 Ω cm, and the electron mobility lifetime product (μτ)e increased from 10−5 cm2 V−1 to 10−4 cm2 V−1. According to the etch pit density and photoluminescence tests, the results show that annealing reduced the dislocation density from 3.28 × 105 cm−2 to 2.52 × 105 cm−2 in the CdZnTe films. In this study, the annealing process which can stably improve the properties of CdZnTe films is obtained, that is, annealing at 400 °C in Te2 atmosphere for 2–4 h.

AB - CdZnTe (CZT) epitaxial films were deposited on GaAs substrates by closed spaced sublimation. In order to reduce the adverse effects of point defects and dislocations in the film on its properties, CZT films were annealed at 400 °C in Te2 atmosphere at different times. The I–V test and energy spectrum show that the resistivity of CZT films increased from 109 Ω cm to 1010 Ω cm, and the electron mobility lifetime product (μτ)e increased from 10−5 cm2 V−1 to 10−4 cm2 V−1. According to the etch pit density and photoluminescence tests, the results show that annealing reduced the dislocation density from 3.28 × 105 cm−2 to 2.52 × 105 cm−2 in the CdZnTe films. In this study, the annealing process which can stably improve the properties of CdZnTe films is obtained, that is, annealing at 400 °C in Te2 atmosphere for 2–4 h.

KW - Annealing

KW - CdZnTe epitaxial Films

KW - Dislocation

KW - Point defects

KW - Resistivity

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U2 - 10.1016/j.mssp.2022.107158

DO - 10.1016/j.mssp.2022.107158

M3 - 文章

AN - SCOPUS:85139849270

SN - 1369-8001

VL - 153

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 107158

ER -

Effects of annealing in Te₂ atmosphere on photoelectric properties and carrier transport properties of CdZnTe films

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Keywords

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