TY - JOUR
T1 - Effects of air annealing on the structure, resistivity, infrared emissivity and transmission of indium tin oxide films
AU - Sun, Kewei
AU - Zhou, Wancheng
AU - Tang, Xiufeng
AU - Huang, Zhibin
AU - Luo, Fa
AU - Zhu, Dongmei
PY - 2012/5/25
Y1 - 2012/5/25
N2 - Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by direct current magnetron sputtering. And then the films were annealed at different temperature ranging 100-400°C for 1h in air. Phase, microstructure, resistivity, infrared emissivity and transmission of the films were characterized by X-ray powder diffraction, a scanning electron microscope, a four-point probe, an infrared emissivity measurement instrument and UV-vis-IR spectrophotometery, respectively. The results show that the crystalline phase of the ITO films transforms from amorphous state to polycrystalline cubic bixbyite In 2O 3 structure at 200°C; the resistivity first decreases with the increasing annealing temperature but then greatly increases; the variation of infrared emissivity with the annealing temperature is same with that of electrical resistivity, which is in consistent with the Hagen-Rubens relation. The film annealed at 200°C shows the lowest resistivity of 6.0×10 -4Ωcm, the lowest infrared emissivity and higher transparency. In addition, in order to study further the effect of annealing on the infrared emissivity, the mean infrared emissivity of the films as a function of temperature were discussed in detail in the process of heating and cooling between room temperature and 350°C.
AB - Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by direct current magnetron sputtering. And then the films were annealed at different temperature ranging 100-400°C for 1h in air. Phase, microstructure, resistivity, infrared emissivity and transmission of the films were characterized by X-ray powder diffraction, a scanning electron microscope, a four-point probe, an infrared emissivity measurement instrument and UV-vis-IR spectrophotometery, respectively. The results show that the crystalline phase of the ITO films transforms from amorphous state to polycrystalline cubic bixbyite In 2O 3 structure at 200°C; the resistivity first decreases with the increasing annealing temperature but then greatly increases; the variation of infrared emissivity with the annealing temperature is same with that of electrical resistivity, which is in consistent with the Hagen-Rubens relation. The film annealed at 200°C shows the lowest resistivity of 6.0×10 -4Ωcm, the lowest infrared emissivity and higher transparency. In addition, in order to study further the effect of annealing on the infrared emissivity, the mean infrared emissivity of the films as a function of temperature were discussed in detail in the process of heating and cooling between room temperature and 350°C.
KW - Air annealing
KW - Direct current magnetron sputtering
KW - Indium tin oxide films
KW - Infrared emissivity
KW - Transmission
UR - http://www.scopus.com/inward/record.url?scp=84861458530&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2012.04.001
DO - 10.1016/j.surfcoat.2012.04.001
M3 - 文章
AN - SCOPUS:84861458530
SN - 0257-8972
VL - 206
SP - 4095
EP - 4098
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - 19-20
ER -