Effect of P and Ge doping on microstructure of Sn-0.3Ag-0.7Cu/Cu solder joints

Xingchen Yan, Yichen Zhang, Chunyan Wang, Kexin Xu, Junjie Wang, Xicheng Wei

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The microstructure and interfacial IMC layer of Cu/SACPG/Cu and Cu/SAC0307/Cu solder joints were comparatively investigated after thermal aging at 150°C for 0h, 24h, 168h and 500h, respectively. Results show that the morphology of IMC at the interface of Cu/SAC0307/Cu solder joint was consistent with that at the interface of Cu/SACPG/Cu joint, which indicates that the addition of P and Ge had little effect on the IMC formation. The tiny particles attached to the Cu6Sn5 were Ag3Sn phase and Ge from the study of three dimensional morphology of IMC. The addition of trace P and Ge in the alloy reduced the thickness of IMC layer and decreased the growth rate of IMC layer with aging time increasing, and had lower impact on the growth rate of IMC layer of Cu3Sn.

Original languageEnglish
Title of host publication2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016
EditorsKeyun Bi, Sheng Liu, Shengjun Zhou
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1185-1188
Number of pages4
ISBN (Electronic)9781509013968
DOIs
StatePublished - 4 Oct 2016
Externally publishedYes
Event17th International Conference on Electronic Packaging Technology, ICEPT 2016 - Wuhan, China
Duration: 16 Aug 201619 Aug 2016

Publication series

Name2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016

Conference

Conference17th International Conference on Electronic Packaging Technology, ICEPT 2016
Country/TerritoryChina
CityWuhan
Period16/08/1619/08/16

Keywords

  • IMC
  • Microstructure
  • SAC0307
  • Thermal aging

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