Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites

Xin Min Yu; Wan Cheng Zhou; Fa Luo; Wen Jing Zheng; Dong Mei Zhu

doi:10.1016/j.jallcom.2008.12.049

Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites

Xin Min Yu, Wan Cheng Zhou, Fa Luo, Wen Jing Zheng, Dong Mei Zhu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Letter › peer-review

66 Scopus citations

Abstract

Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites were prepared in hydrogen or argon atmosphere by chemical vapor deposition, using methytrichloridesilane as reactant precursor. The dielectric properties of the fabricated SiC/SiC composites were investigated in the frequency range of 8.2-12.4 GHz. The results show that stoichiometric and carbon rich SiC matrixes are obtained in hydrogen and argon atmosphere, respectively. The direct current conductivity, relative permittivity (ε′) and dissipation factor (tan δ) of the composites with carbon rich matrix are higher than those of the composites with stoichiometric matrix.

Original language	English
Pages (from-to)	L1-L3
Journal	Journal of Alloys and Compounds
Volume	479
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2008.12.049
State	Published - 24 Jun 2009

Keywords

Ceramics
Crystal structure
Dielectric response
Vapor deposition
X-ray diffraction

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10.1016/j.jallcom.2008.12.049

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title = "Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites",

abstract = "Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites were prepared in hydrogen or argon atmosphere by chemical vapor deposition, using methytrichloridesilane as reactant precursor. The dielectric properties of the fabricated SiC/SiC composites were investigated in the frequency range of 8.2-12.4 GHz. The results show that stoichiometric and carbon rich SiC matrixes are obtained in hydrogen and argon atmosphere, respectively. The direct current conductivity, relative permittivity (ε′) and dissipation factor (tan δ) of the composites with carbon rich matrix are higher than those of the composites with stoichiometric matrix.",

keywords = "Ceramics, Crystal structure, Dielectric response, Vapor deposition, X-ray diffraction",

author = "Yu, {Xin Min} and Zhou, {Wan Cheng} and Fa Luo and Zheng, {Wen Jing} and Zhu, {Dong Mei}",

year = "2009",

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TY - JOUR

T1 - Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites

AU - Yu, Xin Min

AU - Zhou, Wan Cheng

AU - Luo, Fa

AU - Zheng, Wen Jing

AU - Zhu, Dong Mei

PY - 2009/6/24

Y1 - 2009/6/24

N2 - Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites were prepared in hydrogen or argon atmosphere by chemical vapor deposition, using methytrichloridesilane as reactant precursor. The dielectric properties of the fabricated SiC/SiC composites were investigated in the frequency range of 8.2-12.4 GHz. The results show that stoichiometric and carbon rich SiC matrixes are obtained in hydrogen and argon atmosphere, respectively. The direct current conductivity, relative permittivity (ε′) and dissipation factor (tan δ) of the composites with carbon rich matrix are higher than those of the composites with stoichiometric matrix.

AB - Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites were prepared in hydrogen or argon atmosphere by chemical vapor deposition, using methytrichloridesilane as reactant precursor. The dielectric properties of the fabricated SiC/SiC composites were investigated in the frequency range of 8.2-12.4 GHz. The results show that stoichiometric and carbon rich SiC matrixes are obtained in hydrogen and argon atmosphere, respectively. The direct current conductivity, relative permittivity (ε′) and dissipation factor (tan δ) of the composites with carbon rich matrix are higher than those of the composites with stoichiometric matrix.

KW - Ceramics

KW - Crystal structure

KW - Dielectric response

KW - Vapor deposition

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=67349164303&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2008.12.049

DO - 10.1016/j.jallcom.2008.12.049

M3 - 快报

AN - SCOPUS:67349164303

SN - 0925-8388

VL - 479

SP - L1-L3

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites

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Keywords

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