Abstract
The effect of deposition temperature on deposition kinetics and mechanism of silicon boron nitride (SiBN) coating was investigated from SiCl4-BCl3-NH3-H2-Ar mixture using low pressure chemical vapor deposition (LPCVD). Results showed that the deposition rates increased from 700°C to 1030°C, and then decreased above 1030°C. The relative content of silicon increased with increasing deposition temperature. The SiBN coating was of amorphous phase and its surface morphology showed cauliflower-like. The bonding states of SiBN coating were the B-N and Si-N bonding at all deposition temperatures, which demonstrated that the SiBN coating is composed of very small Si-N and B-N particles and the main deposition mechanisms refer to two parallel reaction systems of BCl3+NH3 and SiCl4+NH3. The deposition reactions were mainly controlled by BCl3+NH3 under 900°C, and by SiCl4+NH3 over 900°C.
Original language | English |
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Pages (from-to) | 295-303 |
Number of pages | 9 |
Journal | Surface and Coatings Technology |
Volume | 261 |
DOIs | |
State | Published - 15 Jan 2015 |
Keywords
- Deposition kinetics
- Deposition mechanism
- Deposition temperature
- LPCVD
- SiBN coating