Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

Rong Rong Guo; Wan Qi Jie; Gang Qiang Zha; Ya Dong Xu; Tao Feng; Tao Wang; Zhuo Tong Du

doi:10.1088/1674-1056/24/6/067203

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

Rong Rong Guo, Wan Qi Jie, Gang Qiang Zha, Ya Dong Xu, Tao Feng, Tao Wang, Zhuo Tong Du

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm²/V·s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10^-3 cm²/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

Original language	English
Article number	067203
Journal	Chinese Physics B
Volume	24
Issue number	6
DOIs	https://doi.org/10.1088/1674-1056/24/6/067203
State	Published - 1 Jun 2015

Keywords

CdZnTe
de-trapping
electron transport process
LBIC
mobility

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10.1088/1674-1056/24/6/067203

Cite this

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title = "Effect of de-trapping on carrier transport process in semi-insulating CdZnTe",

abstract = "The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.",

keywords = "CdZnTe, de-trapping, electron transport process, LBIC, mobility",

author = "Guo, {Rong Rong} and Jie, {Wan Qi} and Zha, {Gang Qiang} and Xu, {Ya Dong} and Tao Feng and Tao Wang and Du, {Zhuo Tong}",

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doi = "10.1088/1674-1056/24/6/067203",

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T1 - Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

AU - Guo, Rong Rong

AU - Jie, Wan Qi

AU - Zha, Gang Qiang

AU - Xu, Ya Dong

AU - Feng, Tao

AU - Wang, Tao

AU - Du, Zhuo Tong

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

AB - The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

KW - CdZnTe

KW - de-trapping

KW - electron transport process

KW - LBIC

KW - mobility

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U2 - 10.1088/1674-1056/24/6/067203

DO - 10.1088/1674-1056/24/6/067203

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SN - 1674-1056

VL - 24

JO - Chinese Physics B

JF - Chinese Physics B

IS - 6

M1 - 067203

ER -

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

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Keywords

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