Effect of Ar dilution flow rate on LPCVD a boron-doped carbon coating from BCl3-C3H6-H2-Ar mixtures

Yongsheng Liu, Litong Zhang, Laifei Cheng, Wenbin Yang, Yongdong Xu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A boron-doped carbon coating was deposited from a BCl3-C 3H6-H2-Ar system by LPCVD. The effects of the Ar dilution 110w rate on deposition rates, morphologies, compositions and bonding states were investigated. Deposition rates were almost the same, about 250 nm/h with different Ar dilution flow rate. Surface morphologies were also almost the same. The flat conchoidal aspect of the fracture surface transformed to a laminated structure with an increase in the Ar dilution flow rate. The carbon concentration was above 76.3 at.%, and the boron concentration was less than 17.9 at.%. The boron concentration increased with an increase in the Ar dilution flow rate, corresponding to a decreasing carbon concentration. The main bonding state of boron was B-sub-C and BC2O. The whole deposition process was dominated by a PyC formation reaction, which led to almost the same deposition rate with different Ar dilution flow rates.

Original languageEnglish
Pages (from-to)257-262
Number of pages6
JournalJournal of Ceramic Processing Research
Volume10
Issue number3
StatePublished - Jun 2009

Keywords

  • Boron-doped carbon
  • Deposition rate
  • Dilution gas
  • Low pressure chemical vapor deposition
  • Morphologies and compositions

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