Abstract
A silicon carbide (SiC) coating was prepared on carbon/carbon (C/C) composites by pack cementation using Si, C and Al2O3 powers as raw materials. The role of Al2O3 on the densification of the SiC coating was investigated. The results show that the densification and thickness of the SiC coating obviously increase with the increase of Al2O3 content, which is attributed to the enhanced material transport through liquid Al2O3 at high temperature. Moreover, to study the effect of Al2O3 on the oxidation behavior of SiC coating itself at 1773 K in air, the synthetic SiC powders by pack cementation were sintered. The results present that after oxidation for 40 h, only a few holes are observed in the generated glass layer of the SiC ceramic without Al2O3, while more holes appear in the surface of the oxidized Al2O3 doped SiC ceramic, owning to the doped Al atom destroying the SiO2 network and causing the permeability of oxygen to increase.
Original language | English |
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Pages (from-to) | 12702-12708 |
Number of pages | 7 |
Journal | Ceramics International |
Volume | 44 |
Issue number | 11 |
DOIs | |
State | Published - 1 Aug 2018 |
Keywords
- AlO-SiC coating
- First-principle calculation
- Microstructure
- Oxidation