Cs3Bi2I9晶体的生长及辐射探测性能

Qihao Sun; Yingying Hao; Xin Zhang; Bao Xiao; Wanqi Jie; Yadong Xu

Cs₃Bi₂I₉晶体的生长及辐射探测性能

Translated title of the contribution: Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal

Qihao Sun, Yingying Hao, Xin Zhang, Bao Xiao, Wanqi Jie, Yadong Xu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The large size and high quality inorganic metal halide perovskite Cs₃Bi₂I₉(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P6₃/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs₃Bi₂I₉ is 5.07 g/cm³ and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs₃Bi₂I₉/Au is constructed to measure the carrier ability of Cs₃Bi₂I₉ crystal by the time of flight (TOF) technique. The electron mobility of Cs₃Bi₂I₉ crystal is obtained approximately of 4.33 cm²•V^-1•s^-1. The carrier mobility life product (μτ) of Cs₃Bi₂I₉ crystal is obtained ~8.21×10^-5 cm²•V^-1 by the Hecht equation, with the energy resolution of 39% at 500 V.

Translated title of the contribution	Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal
Original language	Chinese (Traditional)
Pages (from-to)	1907-1912
Number of pages	6
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	50
Issue number	10
State	Published - Oct 2021

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title = "Cs3Bi2I9晶体的生长及辐射探测性能",

abstract = "The large size and high quality inorganic metal halide perovskite Cs3Bi2I9(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P63/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs3Bi2I9 is 5.07 g/cm3 and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs3Bi2I9/Au is constructed to measure the carrier ability of Cs3Bi2I9 crystal by the time of flight (TOF) technique. The electron mobility of Cs3Bi2I9 crystal is obtained approximately of 4.33 cm2•V-1•s-1. The carrier mobility life product (μτ) of Cs3Bi2I9 crystal is obtained ~8.21×10-5 cm2•V-1 by the Hecht equation, with the energy resolution of 39% at 500 V.",

keywords = "Bridgman method, Crystal growth, CsBiI, Metal halide perovskite, Radiation detection",

author = "Qihao Sun and Yingying Hao and Xin Zhang and Bao Xiao and Wanqi Jie and Yadong Xu",

year = "2021",

month = oct,

language = "繁体中文",

volume = "50",

pages = "1907--1912",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "10",

}

TY - JOUR

T1 - Cs3Bi2I9晶体的生长及辐射探测性能

AU - Sun, Qihao

AU - Hao, Yingying

AU - Zhang, Xin

AU - Xiao, Bao

AU - Jie, Wanqi

AU - Xu, Yadong

PY - 2021/10

Y1 - 2021/10

N2 - The large size and high quality inorganic metal halide perovskite Cs3Bi2I9(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P63/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs3Bi2I9 is 5.07 g/cm3 and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs3Bi2I9/Au is constructed to measure the carrier ability of Cs3Bi2I9 crystal by the time of flight (TOF) technique. The electron mobility of Cs3Bi2I9 crystal is obtained approximately of 4.33 cm2•V-1•s-1. The carrier mobility life product (μτ) of Cs3Bi2I9 crystal is obtained ~8.21×10-5 cm2•V-1 by the Hecht equation, with the energy resolution of 39% at 500 V.

AB - The large size and high quality inorganic metal halide perovskite Cs3Bi2I9(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P63/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs3Bi2I9 is 5.07 g/cm3 and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs3Bi2I9/Au is constructed to measure the carrier ability of Cs3Bi2I9 crystal by the time of flight (TOF) technique. The electron mobility of Cs3Bi2I9 crystal is obtained approximately of 4.33 cm2•V-1•s-1. The carrier mobility life product (μτ) of Cs3Bi2I9 crystal is obtained ~8.21×10-5 cm2•V-1 by the Hecht equation, with the energy resolution of 39% at 500 V.

KW - Bridgman method

KW - Crystal growth

KW - CsBiI

KW - Metal halide perovskite

KW - Radiation detection

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M3 - 文章

AN - SCOPUS:85119983536

SN - 1000-985X

VL - 50

SP - 1907

EP - 1912

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 10

ER -

Cs₃Bi₂I₉晶体的生长及辐射探测性能

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