Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

Yaxu Gu; Wanqi Jie; Caicai Rong; Yuhan Wang; Lingyan Xu; Yadong Xu; Haoyan Lv; Hao Shen; Guanghua Du; Xu Fu; Na Guo; Gangqiang Zha; Tao Wang

doi:10.1016/j.nimb.2016.09.001

Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

Yaxu Gu, Wanqi Jie, Caicai Rong, Yuhan Wang, Lingyan Xu, Yadong Xu, Haoyan Lv, Hao Shen, Guanghua Du, Xu Fu, Na Guo, Gangqiang Zha, Tao Wang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 10¹³ p/cm², suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak D_complex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.

Original language	English
Pages (from-to)	16-21
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	386
DOIs	https://doi.org/10.1016/j.nimb.2016.09.001
State	Published - 1 Nov 2016

Keywords

CdZnTe
Dislocation
Photoluminescence (PL)
Proton
Radiation damage
Thermally stimulated current (TSC)

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10.1016/j.nimb.2016.09.001

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Gu, Y., Jie, W., Rong, C., Wang, Y., Xu, L., Xu, Y., Lv, H., Shen, H., Du, G., Fu, X., Guo, N., Zha, G., & Wang, T. (2016). Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 386, 16-21. https://doi.org/10.1016/j.nimb.2016.09.001

@article{284a848a926a4e16985266d11eb65002,

title = "Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques",

abstract = "Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 1013 p/cm2, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak Dcomplex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.",

keywords = "CdZnTe, Dislocation, Photoluminescence (PL), Proton, Radiation damage, Thermally stimulated current (TSC)",

author = "Yaxu Gu and Wanqi Jie and Caicai Rong and Yuhan Wang and Lingyan Xu and Yadong Xu and Haoyan Lv and Hao Shen and Guanghua Du and Xu Fu and Na Guo and Gangqiang Zha and Tao Wang",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2016",

month = nov,

day = "1",

doi = "10.1016/j.nimb.2016.09.001",

language = "英语",

volume = "386",

pages = "16--21",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

Gu, Y, Jie, W, Rong, C, Wang, Y, Xu, L, Xu, Y, Lv, H, Shen, H, Du, G, Fu, X, Guo, N, Zha, G & Wang, T 2016, 'Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 386, pp. 16-21. https://doi.org/10.1016/j.nimb.2016.09.001

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

AU - Gu, Yaxu

AU - Jie, Wanqi

AU - Rong, Caicai

AU - Wang, Yuhan

AU - Xu, Lingyan

AU - Xu, Yadong

AU - Lv, Haoyan

AU - Shen, Hao

AU - Du, Guanghua

AU - Fu, Xu

AU - Guo, Na

AU - Zha, Gangqiang

AU - Wang, Tao

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 1013 p/cm2, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak Dcomplex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.

AB - Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 1013 p/cm2, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak Dcomplex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.

KW - CdZnTe

KW - Dislocation

KW - Photoluminescence (PL)

KW - Proton

KW - Radiation damage

KW - Thermally stimulated current (TSC)

UR - http://www.scopus.com/inward/record.url?scp=84988696667&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2016.09.001

DO - 10.1016/j.nimb.2016.09.001

M3 - 文章

AN - SCOPUS:84988696667

SN - 0168-583X

VL - 386

SP - 16

EP - 21

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

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Keywords

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