Chemical vapor deposition (CVD) of ZrC coatings from ZrCl 4-C3H6-H2

Qiao Mu Liu; Li Tong Zhang; Zhi Xin Meng; Lai Fei Cheng

doi:10.4028/www.scientific.net/AMR.189-193.648

Chemical vapor deposition (CVD) of ZrC coatings from ZrCl ₄-C₃H₆-H₂

Qiao Mu Liu, Li Tong Zhang, Zhi Xin Meng, Lai Fei Cheng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

ZrC coatings were prepared by CVD using ZrCl₄, C ₃H₆, and H₂ as the precursors. The mechanisms responsible for the effects of deposition temperature, H₂ flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H₂ concentration can inhibit carbon deposition, and lead to a cauliflower structure.

Original language	English
Title of host publication	Manufacturing Process Technology
Pages	648-652
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.189-193.648
State	Published - 2011
Event	2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 - Guilin, China Duration: 9 Apr 2011 → 11 Apr 2011

Publication series

Name	Advanced Materials Research
Volume	189-193
ISSN (Print)	1022-6680

Conference

Conference	2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011
Country/Territory	China
City	Guilin
Period	9/04/11 → 11/04/11

Keywords

Chemical vapor deposition
Mechanism
Surface morphology
Zirconium carbide

Access to Document

10.4028/www.scientific.net/AMR.189-193.648

Cite this

@inproceedings{3b92b75e4e834b13994ff047235e6eda,

title = "Chemical vapor deposition (CVD) of ZrC coatings from ZrCl 4-C3H6-H2",

abstract = "ZrC coatings were prepared by CVD using ZrCl4, C 3H6, and H2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.",

keywords = "Chemical vapor deposition, Mechanism, Surface morphology, Zirconium carbide",

author = "Liu, {Qiao Mu} and Zhang, {Li Tong} and Meng, {Zhi Xin} and Cheng, {Lai Fei}",

year = "2011",

doi = "10.4028/www.scientific.net/AMR.189-193.648",

language = "英语",

isbn = "9783037850312",

series = "Advanced Materials Research",

pages = "648--652",

booktitle = "Manufacturing Process Technology",

note = "2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 ; Conference date: 09-04-2011 Through 11-04-2011",

}

Liu, QM, Zhang, LT, Meng, ZX & Cheng, LF 2011, Chemical vapor deposition (CVD) of ZrC coatings from ZrCl ₄-C₃H₆-H₂. in Manufacturing Process Technology. Advanced Materials Research, vol. 189-193, pp. 648-652, 2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011, Guilin, China, 9/04/11. https://doi.org/10.4028/www.scientific.net/AMR.189-193.648

TY - GEN

T1 - Chemical vapor deposition (CVD) of ZrC coatings from ZrCl 4-C3H6-H2

AU - Liu, Qiao Mu

AU - Zhang, Li Tong

AU - Meng, Zhi Xin

AU - Cheng, Lai Fei

PY - 2011

Y1 - 2011

N2 - ZrC coatings were prepared by CVD using ZrCl4, C 3H6, and H2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.

AB - ZrC coatings were prepared by CVD using ZrCl4, C 3H6, and H2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.

KW - Chemical vapor deposition

KW - Mechanism

KW - Surface morphology

KW - Zirconium carbide

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