Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques

The growth of CdZnTe crystals with diameter up to 60 mm using bottom-seeded Bridgman method as well as Bridgman accelerated crucible rotation technique (ACRT-B) was investigated. Both ingots exhibit high yields, where single crystal with the volume exceeding 200 cm³ is produced. The crystal properties of two ingots were compared in the aspects of yields, crystalline quality and composition uniformity. For CdZnTe ingot grown by bottom-seeded Bridgman method, the full width at half-maximum (FWHM) of X-ray rocking curve was determined to be 36?, indicating a better crystalline quality than ingot grown by ACRT-B method, which gave FWHM of 56?. The composition distribution of Zn and In in CdZnTe was determined by using electron probe microanalysis (EPMA) and inductively coupled plasma mass spectrometry (ICP-MS), respectively. The effective segregation coefficients of Zn k_Zn and In k_In in the two ingots were evaluated by fitting the experimental data with the Pfann equation.