Analysis of the Bi-2212 Superconducting Mechanism and the Reason of H2S Zero-Resistance Phenomenon by First Principle Calculations

Tianni Lu, Yuyan Sun, Ming Qi, Lian Zhou

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, the Partial Density of States (PDOS) of each element in doped Bi-2212 high temperature superconductor and H2S under high pressure is calculated by the first principle. According to the calculation results, we made analysis on the phenomenon that the critical temperature (Tc) of high temperature superconductor (HTS) Bi-2212 varies with doping content changing. When the Bi-2212 doping content is optimal, the electron energy is near the superconducting constrain gap, also the cohesive energy that the becoming of Cooper Pair electrons needed is decreasing, so these electrons can turn into the superconducting cooper pairs more easily under the optimal content. In addition, with the optimal doping content, the densities of the superconductive electronics near Fermi surface increase to the maximum, which causes the number of becoming Cooper Pair electrons is increasing. Base on the two factors discussed above, the electrons can be induced to the superconducting electrons under higher temperature, thus the transition temperature of Bi-2212 increases. Last, this paper also discussed the calculation of H2S under high pressure, it is known from the calculating results that the bond between the atoms can be destroyed because of the lattice contraction under high pressure. We speculate that the distribution of the electrons does not satisfy the Pauli Exclusion Principle under high pressure, but in a form liking “crowded”. When H2S is loaded voltage under high pressure, the “crowded” electrons can move as the carrier and form the electronic current. In the processing collision does not occur between electrons, thus the variation of the electron momentum is zero, so H2S shows the zero resistance phenomenon in the room temperature under high pressure.

Original languageEnglish
Pages (from-to)344-351
Number of pages8
JournalMaterials China
Volume36
Issue number5
DOIs
StatePublished - 1 May 2017
Externally publishedYes

Keywords

  • Bi-2212 doping
  • Electronic reunion
  • First principle calculation
  • HS
  • Partial density of states

Fingerprint

Dive into the research topics of 'Analysis of the Bi-2212 Superconducting Mechanism and the Reason of H2S Zero-Resistance Phenomenon by First Principle Calculations'. Together they form a unique fingerprint.

Cite this