TY - JOUR
T1 - Analysis of the Bi-2212 Superconducting Mechanism and the Reason of H2S Zero-Resistance Phenomenon by First Principle Calculations
AU - Lu, Tianni
AU - Sun, Yuyan
AU - Qi, Ming
AU - Zhou, Lian
N1 - Publisher Copyright:
© 2017, The Editorial Board of Materials China. All right reserved.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - In this paper, the Partial Density of States (PDOS) of each element in doped Bi-2212 high temperature superconductor and H2S under high pressure is calculated by the first principle. According to the calculation results, we made analysis on the phenomenon that the critical temperature (Tc) of high temperature superconductor (HTS) Bi-2212 varies with doping content changing. When the Bi-2212 doping content is optimal, the electron energy is near the superconducting constrain gap, also the cohesive energy that the becoming of Cooper Pair electrons needed is decreasing, so these electrons can turn into the superconducting cooper pairs more easily under the optimal content. In addition, with the optimal doping content, the densities of the superconductive electronics near Fermi surface increase to the maximum, which causes the number of becoming Cooper Pair electrons is increasing. Base on the two factors discussed above, the electrons can be induced to the superconducting electrons under higher temperature, thus the transition temperature of Bi-2212 increases. Last, this paper also discussed the calculation of H2S under high pressure, it is known from the calculating results that the bond between the atoms can be destroyed because of the lattice contraction under high pressure. We speculate that the distribution of the electrons does not satisfy the Pauli Exclusion Principle under high pressure, but in a form liking “crowded”. When H2S is loaded voltage under high pressure, the “crowded” electrons can move as the carrier and form the electronic current. In the processing collision does not occur between electrons, thus the variation of the electron momentum is zero, so H2S shows the zero resistance phenomenon in the room temperature under high pressure.
AB - In this paper, the Partial Density of States (PDOS) of each element in doped Bi-2212 high temperature superconductor and H2S under high pressure is calculated by the first principle. According to the calculation results, we made analysis on the phenomenon that the critical temperature (Tc) of high temperature superconductor (HTS) Bi-2212 varies with doping content changing. When the Bi-2212 doping content is optimal, the electron energy is near the superconducting constrain gap, also the cohesive energy that the becoming of Cooper Pair electrons needed is decreasing, so these electrons can turn into the superconducting cooper pairs more easily under the optimal content. In addition, with the optimal doping content, the densities of the superconductive electronics near Fermi surface increase to the maximum, which causes the number of becoming Cooper Pair electrons is increasing. Base on the two factors discussed above, the electrons can be induced to the superconducting electrons under higher temperature, thus the transition temperature of Bi-2212 increases. Last, this paper also discussed the calculation of H2S under high pressure, it is known from the calculating results that the bond between the atoms can be destroyed because of the lattice contraction under high pressure. We speculate that the distribution of the electrons does not satisfy the Pauli Exclusion Principle under high pressure, but in a form liking “crowded”. When H2S is loaded voltage under high pressure, the “crowded” electrons can move as the carrier and form the electronic current. In the processing collision does not occur between electrons, thus the variation of the electron momentum is zero, so H2S shows the zero resistance phenomenon in the room temperature under high pressure.
KW - Bi-2212 doping
KW - Electronic reunion
KW - First principle calculation
KW - HS
KW - Partial density of states
UR - http://www.scopus.com/inward/record.url?scp=85029716380&partnerID=8YFLogxK
U2 - 10.7502/j.issn.1674-3962.2017.05.04
DO - 10.7502/j.issn.1674-3962.2017.05.04
M3 - 文章
AN - SCOPUS:85029716380
SN - 1674-3962
VL - 36
SP - 344
EP - 351
JO - Materials China
JF - Materials China
IS - 5
ER -