A simplification method for capacitance models in AlGaN/GaN high electron mobility transistors under large drain voltage using channel analysis

Haorui Luo, Hao Zhang, Wenrui Hu, Yongxin Guo

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Fingerprint

Dive into the research topics of 'A simplification method for capacitance models in AlGaN/GaN high electron mobility transistors under large drain voltage using channel analysis'. Together they form a unique fingerprint.

Material Science

Earth and Planetary Sciences