TY - JOUR
T1 - A modified vertical bridgman method for growth of high-quality Cd 1-xZrxTe crystals
AU - Li, Guoqiang
AU - Zhang, Xiaolu
AU - Hua, Hui
AU - Jie, Wanqi
PY - 2005/9
Y1 - 2005/9
N2 - In order to deal with the phenomena of Cd evaporation from the raw materials and the heterogeneity caused by the larger-than-unity segregation coefficient of Zn in CdTe during the conventional vertical Bridgman method (VBM) growth of Cdl-xZnxTe (CZT), two modifications - Cd compensation and accelerated crucible rotation technique (ACRT) - are simultaneously adopted to the VBM. By a combination of VBM with the two modifications, several CZT ingots with the dimensions of ∼60 × 150 mm2 are grown. Structural, optical, and electrical characterization of the as-grown CZT crystals reveals that the application of Cd compensation and ACRT is of obvious efficiency in improving concentration homogeneity, reducing defect density, raising crystal quality and, therefore, upgrading the optoelectronic properties of CZT crystals. Nuclear spectra measurements of detectors fabricated from the as-grown crystals also indicate that both modifications can upgrade the detecting performance of CZT.
AB - In order to deal with the phenomena of Cd evaporation from the raw materials and the heterogeneity caused by the larger-than-unity segregation coefficient of Zn in CdTe during the conventional vertical Bridgman method (VBM) growth of Cdl-xZnxTe (CZT), two modifications - Cd compensation and accelerated crucible rotation technique (ACRT) - are simultaneously adopted to the VBM. By a combination of VBM with the two modifications, several CZT ingots with the dimensions of ∼60 × 150 mm2 are grown. Structural, optical, and electrical characterization of the as-grown CZT crystals reveals that the application of Cd compensation and ACRT is of obvious efficiency in improving concentration homogeneity, reducing defect density, raising crystal quality and, therefore, upgrading the optoelectronic properties of CZT crystals. Nuclear spectra measurements of detectors fabricated from the as-grown crystals also indicate that both modifications can upgrade the detecting performance of CZT.
KW - Compound semiconductors
KW - Crystal growth
KW - Dislocation
KW - Electrical resistivity
KW - Optical transmission
UR - http://www.scopus.com/inward/record.url?scp=25444523815&partnerID=8YFLogxK
U2 - 10.1007/s11664-005-0266-3
DO - 10.1007/s11664-005-0266-3
M3 - 文章
AN - SCOPUS:25444523815
SN - 0361-5235
VL - 34
SP - 1215
EP - 1224
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 9
ER -