TY - GEN
T1 - A modified diffusion model for I-V properties of Schottky contacts to high resistivity semiconductors
AU - Wang, Ning
AU - Jie, Wanqi
AU - Xu, Lingyan
AU - Zha, Gangqiang
AU - Zhou, Yan
AU - Xu, Yadong
AU - Wang, Tao
PY - 2013
Y1 - 2013
N2 - This paper presents a model to describe I-V properties of Schottky contacts to high resistivity semiconductors, such as CdTe, CdZnTe, TlBr and so on, when depletion region width is less than the crystal thickness. Effects of non-depletion region on dark current are considered in this model. I-V curves of CdZnTe radiation detectors are fitted quite well with this model. Space charge concentration, barrier height and energy difference between conduction band bottom and Femi Level can also be obtained easily. Furthermore, we use TCAD simulation to explain the fitted parameters.
AB - This paper presents a model to describe I-V properties of Schottky contacts to high resistivity semiconductors, such as CdTe, CdZnTe, TlBr and so on, when depletion region width is less than the crystal thickness. Effects of non-depletion region on dark current are considered in this model. I-V curves of CdZnTe radiation detectors are fitted quite well with this model. Space charge concentration, barrier height and energy difference between conduction band bottom and Femi Level can also be obtained easily. Furthermore, we use TCAD simulation to explain the fitted parameters.
UR - http://www.scopus.com/inward/record.url?scp=84904185593&partnerID=8YFLogxK
U2 - 10.1109/NSSMIC.2013.6829843
DO - 10.1109/NSSMIC.2013.6829843
M3 - 会议稿件
AN - SCOPUS:84904185593
SN - 9781479905348
T3 - IEEE Nuclear Science Symposium Conference Record
BT - 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013
Y2 - 27 October 2013 through 2 November 2013
ER -