Voltage-Behind-Reactance Model of Dual-Three PMSM Considering Fault Simulation

In the simulation of winding faults in Dual-Three Permanent Magnet Synchronous Machine (DTPMSM), the traditional model only applies to the healthy operating state and cannot accurately reflect the operation condition of the DTPMSM in winding fault conditions, so it is necessary to establish a model of DTPMSM that can be suitable for both healthy and faulty conditions. To solve this problem, a Voltage-Behind-Reactance (VBR) model of DTPMSM considering fault simulation is built in this paper, which realizes a direct connection between the DTPMSM and the power electronic circuits and applies to different operating conditions including open-circuit and short-circuit fault. The VBR model of the DTPMSM is verified through comparison with FEA simulations and is of great significance for the in-depth investigation of the simulation and analysis of the fault-tolerant control of DTPMSM.