Vanadium doped Cd_0.9Mn_0.1Te crystal and its optical and electronic properties

Vanadium (V) doped Cd_0.9Mn_0.1Te (CdMnTe:V) crystals were grown with a nominal Vanadium concentration of 1×10¹⁷atoms/cm³ from excess 10 at% Te solution that was carried out by the vertical Bridgman method with accelerated crucible rotation technique(ACRT). The as-grown crystals display a high resistance characteristic of 4.123×10¹°Ω·cm in the wafer cutting from the middle part of the ingot. The infrared microscopy images show that the planar density of Te inclusions/precipitates in the crystals is between 1.4×10³ to 6×10⁵ cm⁻². The measured highest IR transmission in the middle part of the ingot of 63% is near the theoretical limit of 65%. Moreover, the PL spectra show a sharp (D°, X) peak, a flat D_complex peak and a low DAP peak. The (D°, X) peak has a FWHM of 4.36 meV, indicating a high quality of crystallization, while a flat D_complex peak means very low dislocations and defects relative to the vacancies of Cd in the middle part of this ingot. The low DAP peak with a relative intensity of I_DAP/I_(D°_{, X)} of 0.045 demonstrates low impurity concentration in this crystal.