摘要
The relatively low resistivity and severe ion migration in CsPbBr3 significantly degrade the performance of X-ray detectors due to their high detection limit and current drift. The electrical properties and X-ray detection performances of CsPbBr3−nIn single crystals are investigated by doping the iodine atoms into the melt-grown CsPbBr3. The resistivity of CsPbBr3−nIn single crystals increases from 3.6 × 109 (CsPbBr3) to 2.2 × 1011 (CsPbBr2I) Ω cm, restraining the leak current and decreasing the detection limit of the detector. Additionally, CsPbBr3−nIn single crystals exhibit stable dark currents, arising from their high ion migration activation energy. A record sensitivity of 6.3 × 104 µC Gy−1 cm−2 (CsPbBr2.9I0.1) and a low detection limit of 54 nGy s−1 (CsPbBr2I) are achieved by CsPbBr3−nIn single crystals for the 120 keV hard X-ray detection under a 5000 V cm−1 electrical field. The CsPbBr2.9I0.1 detector shows a stable current response with a dark current density of 0.58 µA cm−2 for 30 days and clear imaging for 120 keV Xrays at ambient conditions. The effective iodine atom doping strategy makes the CsPbBr3−nIn single crystals promising for reproducible high-energy hard X-ray imaging systems.
源语言 | 英语 |
---|---|
文章编号 | 2106562 |
期刊 | Advanced Materials |
卷 | 34 |
期 | 12 |
DOI | |
出版状态 | 已出版 - 24 3月 2022 |