TY - JOUR
T1 - Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs
AU - Jian, Jiaying
AU - Dong, Pengfan
AU - Jian, Zengyun
AU - Zhao, Ting
AU - Miao, Chen
AU - Chang, Honglong
AU - Chen, Jian
AU - Chen, Yan Feng
AU - Chen, Yan Bin
AU - Feng, Hao
AU - Sorli, Brice
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/12/27
Y1 - 2022/12/27
N2 - Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm.
AB - Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm.
KW - high switching ratio
KW - resistive random access memory
KW - transitional-metal dichalcogenides
KW - ultralow-power
KW - van der Waals interstice radius
UR - http://www.scopus.com/inward/record.url?scp=85143511500&partnerID=8YFLogxK
U2 - 10.1021/acsnano.2c06728
DO - 10.1021/acsnano.2c06728
M3 - 文章
C2 - 36468939
AN - SCOPUS:85143511500
SN - 1936-0851
VL - 16
SP - 20445
EP - 20456
JO - ACS Nano
JF - ACS Nano
IS - 12
ER -