TY - JOUR
T1 - Three-Dimensional SIP Design of the Four-Channel RF Transceiver Based on Silicon and ALN for X-Band Radar Applications
AU - Lu, Xilong
AU - Zhou, Shigang
AU - Wei, Bin
AU - Zhou, Liguo
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2023/7/1
Y1 - 2023/7/1
N2 - This article proposes a miniature 3-D system in package (SIP) design of the four-channel RF transceiver. The key advancement is the demonstration of 3-D stacking of silicon carriers and aluminum nitride (ALN) high temperature co-fired ceramic (HTCC) carriers based on 70μ m Au micro-bumps. The influences of the carrier on the performance of gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are analyzed in detail. A new silicon carrier with hollow annular through silicon via (TSV) and non-metalized cavity (NMC) is proposed, which is characterized by less impact on MMIC performance, more compact stacking size, and lower fabrication cost. The GaAs MMICs, silicon, and ALN carriers are heterogeneously integrated and stacked vertically to form a 3-D SIP. The proposed hermetic 3-D SIP is highly integrated with a volume of 12.7×13.9×3.6 mm with 7×8 ball grid array (BGA) input and output ports, and capable of working with four different types of passbands for anti-jamming. Measured results indicate that the SIP has the advantages of high reliability, high performance, and mass manufacture.
AB - This article proposes a miniature 3-D system in package (SIP) design of the four-channel RF transceiver. The key advancement is the demonstration of 3-D stacking of silicon carriers and aluminum nitride (ALN) high temperature co-fired ceramic (HTCC) carriers based on 70μ m Au micro-bumps. The influences of the carrier on the performance of gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are analyzed in detail. A new silicon carrier with hollow annular through silicon via (TSV) and non-metalized cavity (NMC) is proposed, which is characterized by less impact on MMIC performance, more compact stacking size, and lower fabrication cost. The GaAs MMICs, silicon, and ALN carriers are heterogeneously integrated and stacked vertically to form a 3-D SIP. The proposed hermetic 3-D SIP is highly integrated with a volume of 12.7×13.9×3.6 mm with 7×8 ball grid array (BGA) input and output ports, and capable of working with four different types of passbands for anti-jamming. Measured results indicate that the SIP has the advantages of high reliability, high performance, and mass manufacture.
KW - 3-D system in package (SIP)
KW - aluminum nitride (ALN)
KW - aurum (Au) micro-bump
KW - ball grid array (BGA)
KW - gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)
KW - heterogeneous integration
KW - hollow annular through silicon via (TSV)
KW - silicon carrier
KW - vertical stacking
UR - http://www.scopus.com/inward/record.url?scp=85164700095&partnerID=8YFLogxK
U2 - 10.1109/TCPMT.2023.3294477
DO - 10.1109/TCPMT.2023.3294477
M3 - 文章
AN - SCOPUS:85164700095
SN - 2156-3950
VL - 13
SP - 1030
EP - 1044
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 7
ER -