TY - JOUR
T1 - Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH3Cl3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system
AU - Dong, Ning
AU - Chai, Nan
AU - Liu, Yongsheng
AU - Liu, Xiaofei
AU - Qin, Hailong
AU - Yin, Xiaowei
AU - Zhang, Litong
AU - Cheng, Laifei
N1 - Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2016/11/1
Y1 - 2016/11/1
N2 - In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl3CH3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si3N4, BN, B4C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H2 ratio, nCH3SiCl3/(nNH3 + nBCl3) and nNH3/(nNH3 + nBCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.
AB - In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl3CH3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si3N4, BN, B4C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H2 ratio, nCH3SiCl3/(nNH3 + nBCl3) and nNH3/(nNH3 + nBCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.
KW - Experimental verification
KW - Low pressure chemical vapor deposition/infiltration
KW - Siliconboron carbonitride ceramic
KW - Thermodynamic analysis
UR - http://www.scopus.com/inward/record.url?scp=84973579544&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2016.05.030
DO - 10.1016/j.jeurceramsoc.2016.05.030
M3 - 文章
AN - SCOPUS:84973579544
SN - 0955-2219
VL - 36
SP - 3581
EP - 3591
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
IS - 15
ER -