The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

Sihong Wu; Gangqiang Zha; Kun Cao; Jinghua Fu; Yang Li; Y. Wang; W. Jie; Tingting Tan

doi:10.1016/j.vacuum.2019.108852

The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

Sihong Wu, Gangqiang Zha, Kun Cao, Jinghua Fu, Yang Li, Y. Wang, W. Jie, Tingting Tan

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

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摘要

High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 10⁵ cm⁻², and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10⁻³ cm²V⁻¹ and 750 cm² V⁻¹s⁻¹, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for ²⁴¹Am@5.49 MeV alpha particles and 31% for ²⁴¹Am@59.5 KeV gamma-ray.

源语言	英语
文章编号	108852
期刊	Vacuum
卷	168
DOI	https://doi.org/10.1016/j.vacuum.2019.108852
出版状态	已出版 - 10月 2019

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abstract = "High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.",

keywords = "CdZnTe, Close spaced sublimation, Epitaxial film, Radiation detector",

author = "Sihong Wu and Gangqiang Zha and Kun Cao and Jinghua Fu and Yang Li and Y. Wang and W. Jie and Tingting Tan",

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T1 - The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

AU - Wu, Sihong

AU - Zha, Gangqiang

AU - Cao, Kun

AU - Fu, Jinghua

AU - Li, Yang

AU - Wang, Y.

AU - Jie, W.

AU - Tan, Tingting

PY - 2019/10

Y1 - 2019/10

N2 - High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.

AB - High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.

KW - CdZnTe

KW - Close spaced sublimation

KW - Epitaxial film

KW - Radiation detector

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The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

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