Temperature dependence of Bi4Ge3O12 photoluminescence spectra

Slawomir M. Kaczmarek; Taiju Tsuboi; Yosuke Nakai; Marek Berkowski; Wei Huang; Zbigniew Kowalski

doi:10.2478/s13536-013-0148-y

Temperature dependence of Bi₄Ge₃O₁₂ photoluminescence spectra

Slawomir M. Kaczmarek, Taiju Tsuboi, Yosuke Nakai, Marek Berkowski, Wei Huang, Zbigniew Kowalski

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Bi₄Ge₃O₁₂ single crystals were obtained using Czochralski growth method. Photoluminescence spectra were analyzed versus temperature from 12 to 295 K. Besides the previously observed emission bands at 610 and 820 nm, the new emission band at 475 nm was found by a careful temperature dependence measurement in the present study. The influence of basic and defect structure on the shape and position of the spectra versus temperature was discussed.

源语言	英语
页（从-至）	7-11
页数	5
期刊	Materials Science- Poland
卷	32
期	1
DOI	https://doi.org/10.2478/s13536-013-0148-y
出版状态	已出版 - 1月 2014
已对外发布	是

访问文件

10.2478/s13536-013-0148-y

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{f47db96d0958457c923f3745ccbc3710,

title = "Temperature dependence of Bi4Ge3O12 photoluminescence spectra",

abstract = "Bi4Ge3O12 single crystals were obtained using Czochralski growth method. Photoluminescence spectra were analyzed versus temperature from 12 to 295 K. Besides the previously observed emission bands at 610 and 820 nm, the new emission band at 475 nm was found by a careful temperature dependence measurement in the present study. The influence of basic and defect structure on the shape and position of the spectra versus temperature was discussed.",

keywords = "Bismuth ortho-germanate, Czochralski growth, Photoluminescence, Single crystal",

author = "Kaczmarek, {Slawomir M.} and Taiju Tsuboi and Yosuke Nakai and Marek Berkowski and Wei Huang and Zbigniew Kowalski",

year = "2014",

month = jan,

doi = "10.2478/s13536-013-0148-y",

language = "英语",

volume = "32",

pages = "7--11",

journal = "Materials Science- Poland",

issn = "0137-1339",

number = "1",

}

TY - JOUR

T1 - Temperature dependence of Bi4Ge3O12 photoluminescence spectra

AU - Kaczmarek, Slawomir M.

AU - Tsuboi, Taiju

AU - Nakai, Yosuke

AU - Berkowski, Marek

AU - Huang, Wei

AU - Kowalski, Zbigniew

PY - 2014/1

Y1 - 2014/1

N2 - Bi4Ge3O12 single crystals were obtained using Czochralski growth method. Photoluminescence spectra were analyzed versus temperature from 12 to 295 K. Besides the previously observed emission bands at 610 and 820 nm, the new emission band at 475 nm was found by a careful temperature dependence measurement in the present study. The influence of basic and defect structure on the shape and position of the spectra versus temperature was discussed.

AB - Bi4Ge3O12 single crystals were obtained using Czochralski growth method. Photoluminescence spectra were analyzed versus temperature from 12 to 295 K. Besides the previously observed emission bands at 610 and 820 nm, the new emission band at 475 nm was found by a careful temperature dependence measurement in the present study. The influence of basic and defect structure on the shape and position of the spectra versus temperature was discussed.

KW - Bismuth ortho-germanate

KW - Czochralski growth

KW - Photoluminescence

KW - Single crystal

UR - http://www.scopus.com/inward/record.url?scp=84901919999&partnerID=8YFLogxK

U2 - 10.2478/s13536-013-0148-y

DO - 10.2478/s13536-013-0148-y

M3 - 文章

AN - SCOPUS:84901919999

SN - 0137-1339

VL - 32

SP - 7

EP - 11

JO - Materials Science- Poland

JF - Materials Science- Poland

IS - 1

ER -

Temperature dependence of Bi4Ge3O12 photoluminescence spectra

摘要

访问文件

其它文件与链接

指纹

引用此

Temperature dependence of Bi₄Ge₃O₁₂ photoluminescence spectra